Method of treating a semiconductor substrate
A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.
1. A method of treating a semiconductor substrate comprising:
forming convex patterns over the semiconductor substrate by dry etching;
cleaning and modifying a surface of the convex patterns by using chemical;
forming a water repellent protective film on the modified surface of the convex patterns;
after forming the water repellent protective film, rinsing the semiconductor substrate by using water;
drying the semiconductor substrate; and
removing the water repellent protective film, leaving the convex patterns.
2. The method of treating a semiconductor substrate according to claim 1 , wherein the modifying is getting the surface of the convex patterns hydrophilic.
3. The method of treating a semiconductor substrate according to claim 2 , wherein the modifying is hydroxylating the surface of the convex patterns.
4. The method of treating a semiconductor substrate according to claim 2 , wherein the modifying is oxidizing the surface of the convex patterns.
5. The method of treating a semiconductor substrate according to claim 4 , wherein the modifying is modifying with OH functional group a dangling bond on the surface of the convex patterns.
6. The method of treating a semiconductor substrate according to claim 1 , wherein the water repellent protective film is formed by using a surfactant.
7. The method of treating a semiconductor substrate according to claim 1 , wherein the water repellent protective film is formed by using a silane coupling agent.
8. The method of treating a semiconductor substrate according to claim 1 , further comprising
rinsing the semiconductor substrate by using rinsing liquid after modifying the surface of the convex patterns and before forming the water repellent protective film.
9. The method of treating a semiconductor substrate according to claim 7 , further comprising
rinsing the semiconductor substrate by using alcohol at a timing of at least either one of: after modifying the surface of the convex patterns and before forming the water repellent protective film; or after forming the water repellent protective film and before rinsing by using water.
10. The method of treating a semiconductor substrate according to claim 7 , further comprising
rinsing the semiconductor substrate by using alcohol, and substituting the alcohol by thinner, after modifying the surface of the convex patterns and before forming the water repellent protective film.
11. The method of treating a semiconductor substrate according to claim 1 , wherein at least a part of the convex pattern is formed with a silicon-containing film.
12. The method of treating a semiconductor substrate according to claim 11 , wherein the silicon-containing film includes either one of polysilicon, silicon oxide and silicon nitride.
13. A method of treating a semiconductor substrate comprising:
forming convex patterns over the semiconductor substrate by dry etching;
cleaning a surface of the convex patterns by using first chemical;
modifying the surface of the convex patterns by using second chemical;
forming a water repellent protective film on the modified surface of the convex patterns;
after forming the water repellent protective film, rinsing the semiconductor substrate by using water;
drying the semiconductor substrate; and
removing the water repellent protective film, leaving the convex patterns.
14. The method of treating a semiconductor substrate according to claim 13 , wherein the modifying is getting the surface of the convex patterns hydrophilic.
15. The method of treating a semiconductor substrate according to claim 14 , wherein the modifying is hydroxylating the surface of the convex patterns.
16. The method of treating a semiconductor substrate according to claim 14 , wherein the modifying is oxidizing the surface of the convex patterns.
17. The method of treating a semiconductor substrate according to claim 16 , wherein the modifying is modifying with OH functional group a dangling bond on the surface of the convex patterns.
18. The method of treating a semiconductor substrate according to claim 13 , wherein the water repellent protective film is formed by using a surfactant.
19. The method of treating a semiconductor substrate according to claim 13 , wherein the water repellent protective film is formed by using a silane coupling agent.
20. The method of treating a semiconductor substrate according to claim 13 , further comprising
rinsing the semiconductor substrate by using rinsing liquid after modifying the surface of the convex patterns and before forming the water repellent protective film.
21. The method of treating a semiconductor substrate according to claim 19 , further comprising
rinsing the semiconductor substrate by using alcohol at a timing of at least either one of: after modifying the surface of the convex patterns and before forming the water repellent protective film; or after forming the water repellent protective film and before rinsing by using water.
22. The method of treating a semiconductor substrate according to claim 19 , further comprising
rinsing the semiconductor substrate by using alcohol, and substituting the alcohol by thinner, after modifying the surface of the convex patterns and before forming the water repellent protective film.
23. The method of treating a semiconductor substrate according to claim 13 , wherein at least a part of the convex pattern is formed with a silicon-containing film.
24. The method of treating a semiconductor substrate according to claim 23 , wherein at least a part of the convex pattern contains the silicon-containing film includes either one of polysilicon, silicon oxide and silicon nitride.