Phase change material structure and related method
View Patent ↗A structure including a phase change material and a related method are disclosed. The structure may include a first electrode; a second electrode; a third electrode; a phase change material electrically connecting the first, second and third electrodes for passing a first current through two of the first, second and third electrodes; and a refractory metal barrier heater layer about the phase change material for converting the phase change material between an amorphous, insulative state and a crystalline, conductive state by application of a second current to the phase change material. The structure may be used as a fuse or a phase change material random access memory (PRAM).
1. A structure comprising:
a first electrode;
a second electrode;
a third electrode;
a phase change material electrically connecting the first, second and third electrodes for passing a first current through two of the first, second and third electrodes; and
a refractory metal barrier heater layer at least partially surrounding the phase change material for converting the phase change material between an amorphous, insulative state and a crystalline, conductive state by application of a second current to the phase change material,
wherein the first electrode and the second electrode are positioned in one metal layer of an integrated circuit (IC) chip, and the third electrode is positioned in another metal layer of the IC chip and coupled to the phase change material by a contact.
2. The structure of claim 1 , wherein each electrode includes copper (Cu).
3. The structure of claim 1 , wherein the phase change material is selected from the group consisting of: germanium (Ge), antimony (Sb) and tellurium (Te) alloy and a germanium (Ge), antimony (Sb) and silicon (Si) alloy.
4. The structure of claim 1 , wherein the second current is applied to the electrode not carrying the first current.
5. The structure of claim 1 , wherein the refractory metal baffler heater layer is selected from the group consisting of: tantalum nitride (TaN), silicon-doped TaN, titanium nitride (TiN), silicon-doped TiN, zirconium nitride (ZrN), silicon-doped ZrN, nobium nitride (NbN), and silicon-doped NbN.
6. The structure of claim 1 , wherein the structure is one of a fuse and a phase change random access memory (PRAM) cell.
7. A structure comprising:
a first copper electrode;
a second copper electrode;
a third copper electrode;
a phase change material electrically connecting the first, second and third copper electrodes for passing a first current through two of the first, second and third copper electrodes; and
a refractory metal baffler heater layer at least partially surrounding the phase change material for converting the phase change material between an amorphous, insulative state and a crystalline, conductive state by application of a second current to the phase change material,
wherein the first copper electrode and the second copper electrode are positioned in one metal layer of an integrated circuit (IC) chip, and the third copper electrode is positioned in another metal layer of the IC chip and coupled to the phase change material by a contact.
8. The structure of claim 7 , wherein the structure is one of a fuse and a phase change random access memory (PRAM) cell.
9. The structure of claim 7 , wherein the phase change material is selected from the group consisting of: germanium (Ge), antimony (Sb) and tellurium (Te) alloy, and a germanium (Ge), antimony (Sb), and silicon (Si) alloy.
10. The structure of claim 7 , wherein a second current is applied to the copper electrode not carrying the first current.
11. The structure of claim 7 , wherein the refractory metal barrier heated layer is selected from the group consisting of: tantalum nitride (TaN), silicon-doped TaN, titanium nitride (TiN), silicon-doped TiN, zirconium nitride (ZrN), silicon-doped ZrN, nobium nitride (NbN), and silicon-doped NbN.