Bipolar/dual FET structure including enhancement and depletion mode FETs with isolated channels
According to an exemplary embodiment, a bipolar/dual FET structure includes a bipolar transistor situated over a substrate. The bipolar/dual FET structure further includes an enhancement-mode FET and a depletion-mode FET situated over the substrate. In the bipolar/dual FET structure, the channel of the enhancement-mode FET is situated above the base of the bipolar transistor and the channel of the depletion-mode FET is situated below the base of the bipolar transistor. The channel of the enhancement-mode FET is isolated from the channel of the depletion-mode FET so as to decouple the enhancement-mode FET from the depletion mode FET.
1. A bipolar/dual FET structure situated on a substrate, said bipolar/dual FET structure comprising:
a bipolar transistor situated over said substrate;
an enhancement-mode FET and a depletion-mode FET situated over said substrate;
a channel of said enhancement-mode FET being situated above a base of said bipolar transistor, and a channel of said depletion-mode FET being situated below said base of said bipolar transistor.
2. The bipolar/dual FET structure of claim 1 , wherein said channel of said enhancement-mode FET is isolated from said channel of said depletion-mode FET so as to decouple said enhancement-mode FET from said depletion mode FET.
3. The bipolar/dual FET structure of claim 1 , wherein said enhancement-mode FET further comprises a back gate situated under said channel of said enhancement-mode FET.
4. The bipolar/dual FET structure of claim 3 , wherein said back gate and said base of said bipolar transistor each comprise a portion of a same epitaxial layer.
5. The bipolar/dual FET structure of claim 1 , wherein said bipolar transistor further comprises a sub-collector, and wherein said sub-collector is situated above said channel of said depletion-mode FET.
6. The bipolar/dual FET structure of claim 5 , wherein said depletion-mode FET further comprises a plurality of contact regions situated over said channel of said depletion-mode FET, and wherein each of said plurality of contact regions and said sub-collector comprise a portion of a same epitaxial layer.
7. The bipolar/dual FET structure of claim 1 , wherein said depletion-mode FET further comprises source and drain contacts situated over said channel of said depletion-mode FET, and wherein said source and drain contacts are situated below said base of said bipolar transistor.
8. The bipolar/dual FET structure of claim 1 , wherein said channel of said enhancement-mode FET comprises a plurality of channel segments.
9. The bipolar/dual FET structure of claim 8 , wherein said bipolar transistor further comprises an emitter situated over said base, and wherein said emitter and one of said plurality of channel segments each comprise a portion of a same epitaxial layer.
10. The bipolar/dual FET structure of claim 1 , wherein said substrate comprises gallium arsenide.
11. A bipolar/dual FET structure situated on a substrate, said bipolar/dual FET structure comprising:
a bipolar transistor situated over said substrate, said bipolar transistor comprising a base situated over a collector and a sub-collector situated under said collector;
an enhancement-mode FET and a depletion-mode FET situated over said substrate;
a channel of said enhancement-mode FET being situated above said base of said bipolar transistor and a channel of said depletion-mode FET being situated below said sub-collector of said bipolar transistor, thereby decoupling said enhancement-mode FET from said depletion-mode FET.
12. The bipolar/dual FET structure of claim 11 , wherein said enhancement-mode FET further comprises a back gate situated under said channel of said enhancement-mode FET.
13. The bipolar/dual FET structure of claim 12 , wherein said back gate and said base of said bipolar transistor each comprise a portion of a same epitaxial layer.
14. The bipolar/dual FET structure of claim 1 , wherein said depletion-mode FET further comprises a plurality of contact regions situated over said channel of said depletion-mode FET, and wherein each of said plurality of contact regions and said sub-collector comprise a portion of a same epitaxial layer.
15. The bipolar/dual FET structure of claim 14 , wherein said depletion-mode FET further comprise a source contact situated over one of said plurality of contact regions, and wherein said source contact is situated below said collector of said bipolar transistor.
16. The bipolar/dual FET structure of claim 11 , wherein said channel of said enhancement-mode FET comprises a plurality of channel segments.
17. The bipolar/dual FET structure of claim 16 , wherein said bipolar transistor further comprises an emitter situated over said base, and wherein said emitter and one of said plurality of channel segments each comprise a portion of a same epitaxial layer.
18. The bipolar/dual FET structure of claim 11 further comprising an isolation region situated between said bipolar transistor and said enhancement-mode FET.
19. The bipolar/dual FET structure of claim 11 further comprising an isolation region situated between said enhancement-mode FET and said depletion-mode FET.
20. The bipolar/dual FET structure of claim 11 , wherein said substrate comprises gallium arsenide.