Semiconductor device manufacturing method for preventing patterns from inclining in drying process
View Patent ↗A method of manufacturing a semiconductor device of the present invention has the steps of forming a pattern made of a processed film or a resist on a substrate, washing the pattern with a washing liquid which is a liquid including at least water, spreading an amphiphilic material that has a hydrophilic group and a hydrophobic group on the surface of the washing liquid remaining on the substrate after washing the pattern, and drying the substrate to remove the washing liquid on the substrate after spreading the amphiphilic material. When moisture is removed in the drying step, molecules of the amphiphilic material are spread on the surface of the washing liquid, so that the surface tension of the washing liquid is reduced to prevent the pattern from inclining.
1. A method of manufacturing a semiconductor device, comprising:
forming a pattern made of a processed film or a resist on a substrate;
washing said pattern with a washing liquid which is a liquid consisting essentially of water, the washing liquid thereby remaining on the substrate having the pattern; then
adjusting a pH value of the washing liquid as a function of an amount of an amphiphilic material; then
spreading said amphiphilic material having a hydrophilic group and a hydrophobic group on a surface of the washing liquid remaining on said substrate to reduce surface tension of the washing liquid; and
drying said substrate to substantially completely remove, from said substrate, the washing liquid remaining on said substrate after spreading said amphiphilic material.
2. The method of manufacturing a semiconductor device according to claim 1 , wherein the amphiphilic material having a hydrophilic group and a hydrophobic group, the amphiphilic material stands vertically to a surface of the water with the hydrophilic group positioned closer to the water surface, thereby forming a monomolecular or bimolecular film.
3. The method of manufacturing a semiconductor device according to claim 1 , wherein the amphiphilic material is a fatty acid, a lipid or a salt.
4. The method of manufacturing a semiconductor device according to claim 1 , further comprising the step of removing the amphiphilic material after the drying step.
5. The method of manufacturing a semiconductor device according to claim 1 , wherein said pattern made of the processed film is a pattern comprising an insulating film or a conductive film.
6. The method of manufacturing a semiconductor device according to claim 1 , wherein said step of spreading said amphiphilic material includes controlling the amount of said amphiphilic material in relation to the area of a main surface of said substrate.
7. The method of manufacturing a semiconductor device according to claim 1 , wherein said step of spreading said amphiphilic material includes controlling the amount of said amphiphilic material in relation to at least one condition, that being either the temperature of the washing liquid or an atmosphere.
8. The method of manufacturing a semiconductor device according to claim 1 , wherein said step of spreading said amphiphilic material includes:
supplying the washing liquid with a solution containing said amphiphilic material and controlling the amount of said amphiphilic material in the solution by controlling the concentration of said amphiphilic material.
9. The method of manufacturing a semiconductor device according to claim 8 , wherein said amphiphilic material has a concentration in a range of 10E-5 - 10E-7 mol/ml.
10. The method of manufacturing a semiconductor device according to claim 1 , wherein said drying step includes spin drying.
11. The method of manufacturing a semiconductor device according to claim 10 , wherein said spin drying includes spinning said substrate at a predetermined rotational speed, and then spinning said substrate at a rotational speed higher than the predetermined rotational speed.
12. The method of manufacturing a semiconductor device according to claim 1 , wherein said drying step includes additionally supplying said amphiphilic material to the washing liquid remaining on said substrate while spin drying is being performed.
13. A method of manufacturing a semiconductor device, comprising:
forming a pattern made of a processed film or a resist on a substrate;
washing said pattern with a washing liquid which is a liquid consisting essentially of water, the washing liquid thereby remaining on the substrate having the pattern;
spreading an amphiphilic material having a hydrophilic group and a hydrophobic group on a surface of the washing liquid remaining on said substrate to reduce surface tension of the washing liquid; and
drying said substrate to substantially completely remove, from said substrate, the washing liquid remaining on said substrate after spreading said amphiphilic material,
wherein said drying step includes at least a step of heating said substrate at a temperature higher than the boiling points of said washing liquid and said amphiphilic material.
14. A method of manufacturing a semiconductor device, comprising:
forming a pattern made of a processed film or a resist on a substrate;
washing said pattern with a washing liquid which is a liquid consisting essentially of water, the washing liquid thereby remaining on the substrate having the pattern;
spreading an amphiphilic material having a hydrophilic group and a hydrophobic group on a surface of the washing liquid remaining on said substrate to reduce surface tension of the washing liquid; and
drying said substrate to substantially completely remove, from said substrate, the washing liquid remaining on said substrate after spreading said amphiphilic material,
wherein said drying step includes a step of heating said substrate, and
said step of heating includes heating said substrate in a temperature range of 100° C. to 240° C. when said pattern comprises the resist.
15. A method of manufacturing a semiconductor device, comprising:
forming a pattern made of a processed film or a resist on a substrate;
washing said pattern with a washing liquid which is a liquid consisting essentially of water, the washing liquid thereby remaining on the substrate having the pattern;
spreading an amphiphilic material having a hydrophilic group and a hydrophobic group on a surface of the washing liquid remaining on said substrate to reduce surface tension of the washing liquid; and
drying said substrate to substantially completely remove, from said substrate, the washing liquid remaining on said substrate after spreading said amphiphilic material,
wherein
said drying step includes a step of heating said substrate, and
said step of heating includes heating said substrate in a temperature range of 100° C. to 600° C. when said pattern comprises the processed film.
16. The method of manufacturing a semiconductor device according to claim 3 , wherein the fatty acid is a long chain fatty acid, and the salt is a long chain salt.
17. The method of manufacturing a semiconductor device according to claim 3 , wherein the fatty acid is stearic acid or myristic acid, and the lipid is a liposome having two hydrophobic chains, and the liposome forms a bimolecular film from strong cohesion of hydrocarbons.
18. A method of manufacturing a semiconductor device comprising:
forming a pattern made of a processed film or a resist on a substrate;
washing said pattern with pure water;
spreading an amphiphilic material having a hydrophilic group and a hydrophobic group on a surface of the pure water remaining on said substrate after washing said pattern, the amphiphilic material has a concentration in a range of 10E-5 to 10E-7 mol/ml, the amphiphilic material forming a monomolecular or bimolecular film, the amphiphilic material being a fatty acid, a lipid or a salt;
drying said substrate to remove the washing liquid on said substrate after spreading said amphiphilic material; and
removing the amphiphilic material.
19. The method of manufacturing a semiconductor device according to claim 18 , wherein the amphiphilic material forms the monomolecular film.