Field effect transistor
A field effect transistor is provided. The field effect transistor includes a channel region, electrically conductive channel connection regions, and a control region. The electrically conductive channel connection regions adjoin the channel region along with a transistor dielectric. The control region is separated from the channel region by the transistor dielectric. In addition, the control region may comprise a monocrystalline material.
1. A method for producing a field effect transistor comprising the steps of:
forming a trench with at least one monocrystalline region of a monocrystalline substrate at a trench wall or at a trench bottom;
producing a dielectric at the monocrystalline region;
producing of a channel region in the trench after the step of producing of the dielectric;
forming electrically conductive channel connection regions; and
forming a gate control region adjacent the dielectric in the monocrystalline region.
2. The method as claimed in claim 1 , wherein a monocrystalline dielectric is produced by epitaxial growth on the monocrystalline region.
3. The method as claimed in claim 2 , wherein the monocrystalline dielectric is produced by means of molecular beam epitaxy.
4. The method as claimed in claim 2 , wherein the monocrystalline dielectric is produced by means of vapor phase epitaxy.
5. The method as claimed in claim 2 , wherein the monocrystalline dielectric is produced by means of atomic layer deposition.
6. The method as claimed in claim 1 , wherein a monocrystalline channel region is produced by epitaxial growth on the dielectric.
7. The method as claimed in claim 6 , wherein the monocrystalline channel region is produced by vapor phase deposition.
8. The method as claimed in claim 1 , wherein the gate control region is formed in the monocrystalline region and outside the trench.