IP Library › Granted Patent US 7,772,024
Granted Patent B2
US 7,772,024 · App. 10/554,642 · Granted Aug 10, 2010

Method of manufacturing a micro-mechanical element

Assignee: Cavendish Kinetics Ltd.
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,772,024
App. No.
10/554,642
Granted
Aug 10, 2010
Kind
B2
Abstract

A method of manufacturing a micromechanical element wherein the method comprises the steps of providing a layer of base material, applying at least one at least partly sacrificial layer of an etchable material, patterning the at least partly sacrificial layer, to define at least a portion of the shape of the element, applying at least one structural layer of a mechanical material, patterning the structural layer to form at least a portion of the element, and removing at least partly the patterned at least partly sacrificial layer to release partly free the element. The mechanical material is selected from the group of conductive materials.

Claims (32)

1. Method of manufacturing a micro-mechanical element, the method comprising the steps of:

providing a layer of base material;

applying at least one partly sacrificial layer of an etchable material;

patterning the partly sacrificial layer to define at least a portion of the shape of the element, wherein the element comprises at least one structural layer;

applying the at least one structural layer of a mechanical material, the at least one structural layer consisting entirely of titanium nitride;

patterning the structural layer to form at least a portion of the element; and

removing at least partly the patterned at least partly sacrificial layer to at least partly free the element.

2. Method according to claim 1 , whereby the etchable material is selected from the group of silicon-based materials.

3. Method according to claim 2 , whereby the etchable material contains silicon nitride.

4. Method according to claim 3 , whereby the etch rate of the silicon nitride is increased by increasing the hydrogen content.

5. Method according to claim 2 , whereby the etchable material contains amorphous silicon.

6. Method according to claim 2 , whereby the etchable material contains silicon oxide.

7. Method according to claim 2 , whereby the etchable material contains spin-on glass.

8. Method according to claim 1 , whereby the etchable material contains a polymer.

9. Method according to claim 2 , whereby the at least partly removing of the patterned at least partly sacrificial layer includes using a fluorine gas in an etching process.

10. Method according to claim 8 , whereby the at least partly removing of the patterned at least partly sacrificial layer includes using oxygen gas in a plasma etching process.

11. Method according to claim 1 , further including the steps of: applying at least one conductive layer of a conductive material; and patterning the conductive layer to form at least a portion of at least one first electrode.

12. Method according to claim 11 , whereby the conductive material contains titanium.

13. Method according to claim 12 , whereby the conductive material contains titanium nitride.

14. Method according to claim 11 , whereby the conductive material contains platinum.

15. Method according to claim 11 , whereby during at least partly removing of the patterned at least partly sacrificial layer a controlled amount of a material is removed from at least part of the surface of the first electrode.

16. Method according to claim 1 , whereby during the at least partly removing of the patterned at least partly sacrificial layer a controlled amount of material is removed from at least part of the surface of the free part of the element.

17. A method of manufacturing a micro-mechanical element, comprising:

depositing a first conductive layer over a substrate;

patterning the first conductive layer to expose the substrate and form a patterned first conductive layer and a first electrode;

depositing a sacrificial layer over the patterned first conductive layer, the first electrode and the exposed substrate;

patterning the sacrificial layer to expose the patterned first conductive layer;

depositing a second conductive layer comprising titanium nitride on the exposed patterned first conductive layer and the patterned sacrificial layer;

patterning the second conductive layer to form a micro-mechanical element in contact with the patterned first conductive layer and the patterned sacrificial layer, the micro-mechanical element consisting entirely of the second conductive layer; and

removing the patterned sacrificial layer such that a portion of the micro-mechanical element is spaced from the first electrode.

18. The method of claim 17 , wherein the first conductive layer comprises titanium nitride.

19. The method of claim 17 , wherein the sacrificial layer comprises spin on glass.

Assignments (3)
INTANGIBLE PROPERTY PURCHASE AGREEMENT Recorded Feb 10, 2022
From: CAVENDISH KINETICS LIMITED
To: QORVO US, INC.
Reel/Frame 058983/0599 →
CORRECTIVE ASSIGNMENT TO CORRECT EXECUTION DATE, PREVIOUSLY RECORDED ON REEL 017347 FRAME 0475. Recorded Aug 4, 2006
From: VAN KAMPEN, ROBERT; SMITH, CHARLES GORDON; LUO, JACK; WEEKS, ANDREW JOHN
To: CAVENDISH KINETICS LTD.
Reel/Frame 018085/0649 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 14, 2005
From: VAN KAMPEN, ROBERT; SMITH, CHARLES GORDON; LUO, JACK; WEEKS, ANDREW JOHN
To: CAVENDISH KINETICS LTD.
Reel/Frame 017347/0475 →
Priority Claims (1)
NL 1023275 · Apr 25, 2003 · national
Continuity (1)
Related Publication 20070065963A1 · Mar 22, 2007