High resolution resists for next generation lithographies
View Patent ↗The present invention addresses many of the current limitations in sub-100 nm lithographic techniques by providing novel resists that achieve high sensitivity, high contrast, high resolution, and high dry-etch resistance for pattern transfer to a substrate. In one embodiment, the present invention provides a polymeric resist comprising an adamantyl component and a photoacid generating component.
1. A polymeric resist comprising:
an adamantyl component; and
a polymerizable cationic photoacid generator component comprising [p-CH 2 ═C(CH 3 )C(O)OC 6 H 4 SMe 2 ]OSO 2 CF 3 , [p-CH 2 ═C(CH 3 )C(O)OC 6 H 4 SMe 2 ]OSO 2 C 4 F 9 , or combinations thereof.
2. A polymeric resist comprising:
an adamantyl component; and
a polymerizable anionic photoacid generator component comprising [p-CH 2 ═CH—C 6 H 4 SO 3 ]S(Me 2 )(C 6 H 5 ).
3. A lithographic process comprising:
exposing a lithographic recording medium to radiation to form a pattern and developing the pattern, the lithographic recording medium comprising a polymeric resist comprising an adamantyl component and a polymerizable cationic photoacid generator component comprising [p-CH 2 ═C(CH 3 )C(O)OC 6 H 4 SMe 2 ]OSO 2 CF 3 , [p-CH 2 ═C(CH 3 )C(O)OC 6 H 4 SMe 2 ]OSO 2 C 4 F 9 , or combinations thereof.
4. A lithographic process comprising:
exposing a lithographic recording medium to radiation to form a pattern; and developing the pattern, the lithographic recording medium comprising a polymeric resist comprising an adamantyl component and a polymerizable anionic photoacid generator component comprising [p-CH 2 ═CH—C 6 H 4 SO 3 ]S(Me 2 )(C 6 H 5 ).
5. A polymeric resist comprising:
a hydroxystyrene component;
an adamantyl component; and
a polymerizable cationic photoacid generator component comprising [p-CH 2 ═C(CH 3 )C(O)OC 6 H 4 SMe 2 ]OSO 2 CF 3 , [p-CH 2 ═C(CH 3 )C(O)OC 6 H 4 SMe 2 ]OSO 2 C 4 F 9 , or combinations thereof.
6. A polymeric resist comprising:
a hydroxystyrene component;
an adamantyl component; and
a polymerizable anionic photoacid generator component comprising [p-CH 2 ═CH—C 6 H 4 SO 3 ]S(Me 2 )(C 6 H 5 ).
7. A lithographic process comprising:
exposing a lithographic recording medium to radiation to form a pattern and developing the pattern, the lithographic recording medium comprising a polymeric resist comprising a hydroxystyrene component, an adamantyl component, and a polymerizable cationic photoacid generator component comprising [p-CH 2 ═C(CH 3 )C(O)OC 6 H 4 SMe 2 ]OSO 2 CF 3 , [p-CH 2 ═C(CH 3 )C(O)OC 6 H 4 SMe 2 ]OSO 2 C 4 F 9 , or combinations thereof.
8. A lithographic process comprising:
exposing a lithographic recording medium to radiation to form a pattern and developing the pattern, the lithographic recording medium comprising a polymeric resist comprising a hydroxystyrene component, an adamantyl component, and a polymerizable anionic photoacid generator component comprising [p-CH 2 ═CH—C 6 H 4 SO 3 ]S(Me 2 )(C 6 H 5 ).
9. A method for producing a polymeric resist comprising:
incorporating a photoacid generating group in a main polymeric chain of the polymeric resist, the polymeric resist comprising a base component, and the photoacid generating group comprising a cationic photoacid generator, wherein the cationic photoacid generator comprises [p-CH 2 ═C(CH 3 )C(O)OC 6 H 4 SMe 2 ]OSO 2 CF 3 , [p-CH 2 ═C(CH 3 )C(O)OC 6 H 4 SMe 2 ]OSO 2 C 4 F 9 , or combinations thereof.
10. A method for producing a polymeric resist comprising:
incorporating a photoacid generating group in a main polymeric chain of the polymeric resist, the polymeric resist comprising a base component, and the photoacid generating group comprising an anionic photoacid generator, wherein the anionic photoacid generator comprises [p-CH 2 ═CH—C 6 H 4 SO 3 ]S(Me 2 )(C 6 H 5 ).
11. A method for producing a polymeric resist comprising:
incorporating a photoacid generating group in a main polymeric chain of a polymeric resist wherein the photoacid generating group comprises [p-CH 2 ═C(CH 3 )C(O)OC 6 H 4 SMe 2 ]OSO 2 CF 3 , [p-CH 2 ═C(CH 3 )C(O)OC 6 H 4 SMe 2 ]OSO 2 C 4 F 9 , or combinations thereof.
12. A method for producing a polymeric resist comprising:
incorporating a photoacid generating group in a main polymeric chain of a polymeric resist wherein the photoacid generating group comprises [p-CH 2 ═CH—C 6 H 4 SO 3 ]S(Me 2 )(C 6 H 5 ).