Semiconductor structure and method for forming the same
Example embodiments are directed to a method of forming a semiconductor structure and a semiconductor structure including a semiconductor unit including a protrusion on a front side of the semiconductor unit and a recess on a backside of the semiconductor unit.
1. A semiconductor structure, comprising:
semiconductor chips including at least a penetrating hole therein; and
connecting structures between the semiconductor chips, each of the connecting structures including a plug pattern in the penetrating hole and a socket pattern between the plug pattern and a sidewall of the penetrating hole,
wherein the plug pattern includes a main plug pattern and a subsidiary plug pattern, the main plug pattern defining a recess in the socket pattern and the recess encloses the subsidiary plug pattern of an adjacent connecting structure, and an inner wall of the socket pattern is in direct contact with an outer wall of the enclosed subsidiary plug pattern.
2. The semiconductor structure of claim 1 , wherein the socket pattern includes
an oxidation-preventing metal pattern penetrating through the penetrating hole, and
an insulating pattern between the oxidation-preventing metal pattern and the semiconductor chip,
wherein the subsidiary plug pattern is in direct contact with the inner wall of the socket pattern at the recess.
3. The semiconductor structure of claim 2 , wherein the oxidation-preventing metal pattern is made of at least one of noble metals, and the subsidiary plug pattern is in direct contact with the oxidation-preventing metal pattern.
4. The semiconductor structure of claim 2 , further comprising:
a first metal pattern between the oxidation-preventing metal pattern and the insulating pattern,
wherein the first metal pattern is made of at least one of titanium, titanium nitride, tantalum, tantalum nitride, tungsten, tungsten nitride, chromium, nickel, tungsten titanium, and alloys thereof.
5. The semiconductor structure of claim 2 , further comprising:
a second metal pattern between the oxidation-preventing metal pattern and the main plug pattern and exposing an inner wall of the oxidation-preventing metal pattern at the recess,
wherein the second metal pattern is made of at least one of copper, titanium, titanium nitride, tantalum, tantalum nitride, tungsten, tungsten nitride, and tungsten titanium.
6. The semiconductor structure of claim 1 , wherein the subsidiary plug pattern is made of one of low melting point metals and solder alloys.
7. The semiconductor structure of claim 1 , wherein the recess is completely filled with the subsidiary plug pattern.
8. The semiconductor structure of claim 1 , wherein
a portion of the socket pattern adjacent the outer wall of the enclosed subsidiary plug pattern includes an insulating layer, at least a first outer metal layer, and a second metal layer, and
an extent of oxidation of the first outer metal layer is greater than an extent of oxidation of the second metal layer and an extent of oxidation of the second metal layer is less than an extent of oxidation of the main plug pattern.
9. The semiconductor structure of claim 8 , wherein
the first outer metal layer includes at least one of Ti, TiN, Ta, TaN, W, WN, and TiW,
the second metal layer includes at least one of Au and Pd, and
the main plug pattern includes Cu.
10. The semiconductor structure of claim 8 , wherein
a portion of the socket pattern adjacent the main plug includes an insulating layer, at least a first outer metal layer, a second metal layer, and a first inner metal layer, and
an extent of oxidation of the first outer metal layer is greater than an extent of oxidation of the second metal layer and the extent of oxidation of the second metal layer is less than an extent of oxidation of the first inner metal layer.
11. The semiconductor structure of claim 10 , wherein
the first outer metal layer includes at least one of Ti, TiN, Ta, TaN, W, WN, and TiW,
the second metal layer includes at least one Au and Pd,
the first inner metal layer includes at least one of Ti, TiN, Ta, TaN, W, WN, and TiW, and
the main plug pattern includes Cu.
12. The semiconductor structure of claim 1 , wherein a width of the subsidiary plug is less than or equal to a width of the recess.
13. The semiconductor structure of claim 1 , wherein the subsidiary plug is a bonding pad.
14. The semiconductor structure of claim 13 , wherein the subsidiary plug protrudes from an adhesive insulating layer.
15. The semiconductor structure of claim 14 , further comprising:
a protection layer on an upper surface of the semiconductor chip including the penetrating hole;
a UBM layer on the main plug pattern; and
an adhesive insulating layer covering the UBM layer and the protection layer and exposing a protrusion, wherein
the socket layer is connected to an I/O pad on the upper surface.
16. The semiconductor structure of claim 1 , wherein the chips are electrically connected via one of the subsidiary plug pattern and the recess.
17. A package, comprising:
a plurality of semiconductor structures of claim 1 , connected by their respective connecting structures.
18. A multichip package, comprising:
the semiconductor structure of claim 1 , wherein
one of the semiconductor chips is an upper semiconductor chip having the recess defined by the main plug pattern; and
another of the semiconductor chips is a lower semiconductor chip having the subsidiary plug pattern enclosed by the recess.
19. The multichip package of claim 18 , further comprising:
a board including a recess, the recess of the board connected to a protrusion of the upper semiconductor chip; and
a molding material, attached to the board, the molding material and the board surrounding each of the semiconductor chips.
20. The semiconductor structure of claim 16 , wherein the subsidiary plug pattern and the socket pattern in the recess form an intermetallic bond.
21. The semiconductor structure of claim 20 , wherein the intermetallic bond anchors one of the semiconductor chips to another of the semiconductor chips.
22. The semiconductor structure of claim 21 , wherein the subsidiary plug pattern is made of a low melting point metal and a portion of the socket pattern in the recess includes at least one of gold and palladium.