Semiconductor memory integrated circuit and its manufacturing method
A method of manufacturing a semiconductor memory integrated circuit intended to improve properties and reliability of its peripheral circuit includes the step of forming a tunnel oxide film ( 21 a ) in the cell array region, gate oxide film ( 21 b ) for a high-voltage circuit and gate oxide film ( 21 c ) for a low-voltage circuit both in the peripheral circuit to respectively optimum values of thickness, and covering them with a first-layer polycrystalline silicon film ( 22 ). After that, device isolation grooves ( 13 ) are formed and buried with a device isolation insulating film ( 14 ). The first-layer polycrystalline silicon film ( 24 ) is a non-doped film, and after device isolation, a second-layer polycrystalline silicon film ( 24 ) is doped with phosphorus in the cell array region to form floating gates made of the first-layer polycrystalline silicon film ( 22 ) and the second-layer polycrystalline silicon film ( 24 ). In the peripheral circuit, gate electrodes are made of a multi-layered film including the first-layer polycrystalline silicon, film ( 22 ), second-layer polycrystalline silicon film ( 24 ) and third-layer polycrystalline silicon film 28 , and impurities are ion implanted thereafter to respective transistor regions under respectively optimum conditions.
1. A method of manufacturing a non-volatile semiconductor memory device including a semiconductor substrate having a memory cell region and a peripheral circuit region, comprising:
forming a first insulating film on the semiconductor substrate in the memory cell region and a second insulating film on the semiconductor substrate in the peripheral circuit region;
forming a first conductive film on the first insulating film in the memory cell region and the second insulating film in the peripheral circuit region, the first conductive film having a first non-doped polycrystalline silicon film;
forming device isolation regions in the memory cell region and the peripheral circuit region, each of the device isolation regions including an insulator having a lower portion embedded in the semiconductor substrate and an upper portion protruding from an upper surface of the semiconductor substrate, respectively;
implanting impurities in the first conductive film of the memory cell region without implanting the impurities in the first conductive film of the peripheral circuit region;
forming an inter-gate insulating film on the impurities-doped first conductive film in the memory cell region without forming the inter-gate insulating film on the non-doped first conductive film in the peripheral circuit region; and
forming a second conductive film on the inter-gate insulating film in the memory cell region and on the non-doped first conductive film in the peripheral circuit region,
wherein the second conductive film has a second non-doped polycrystalline silicon film.
2. The method of claim 1 , wherein the impurities include phosphorus.
3. The method of claim 1 , wherein a thickness of the first insulating film in the memory cell region is smaller than a thickness of the second insulating film in the peripheral circuit region.
4. The method of claim 1 further comprising forming a salicide film on the second conductive film.
5. A method of manufacturing a non-volatile semiconductor memory device including a semiconductor substrate having a memory cell region and a peripheral circuit region, comprising:
forming a first insulating film formed on the semiconductor substrate in the memory cell region and a second insulating film on the semiconductor substrate in the peripheral circuit region;
forming a first conductive film on the first insulating film in the memory cell region and the second insulating film in the peripheral circuit region, the first conductive film having a first non-doped polycrystalline silicon film;
forming device isolation regions in the memory cell region and the peripheral circuit region, each of the device isolation regions including an insulator having a lower portion embedded in the semiconductor substrate and an upper portion protruding from an upper surface of the semiconductor substrate, respectively;
implanting impurities in the first conductive film of the memory cell region without implanting the impurities in the first conductive film of the peripheral circuit region;
forming an inter-gate insulating film on the impurities-doped first conductive film in the memory cell region and the non-doped first conductive film in the peripheral circuit region;
removing the inter-gate insulating film in the peripheral circuit region while leaving the inter-gate insulating film in the memory cell region; and
forming a second conductive film on the inter-gate insulating film in the memory cell region and on the non-doped first conductive film in the peripheral circuit region,
wherein the second conductive film has a second non-doped polycrystalline silicon film.
6. The method of claim 5 , wherein the impurities include phosphorus.
7. The method of claim 5 , wherein a thickness of the first insulating film in the memory cell region is smaller than a thickness of the second insulating film in the peripheral circuit region.
8. The method of claim 5 further comprising forming a salicide film on the second conductive film.
9. A method of manufacturing a non-volatile semiconductor memory device including a semiconductor substrate having a memory cell region and a peripheral circuit region, comprising:
forming a first insulating film on the semiconductor substrate in the memory cell region and a second insulating film on the semiconductor substrate in the peripheral circuit region;
forming a first conductive film on the first insulating film in the memory cell region and the second insulating film in the peripheral circuit region, the first conductive film having a first non-doped polycrystalline silicon film;
forming device isolation regions in the memory cell region and the peripheral circuit region, each of the device isolation regions including an insulator having a lower portion embedded in the semiconductor substrate and an upper portion protruding from an upper surface of the semiconductor substrate, a height of the insulator being higher than a height of the first conductive film relative to the upper surface of the semiconductor substrate, respectively;
implanting impurities in the first conductive film of the memory cell region without implanting the impurities in the first conductive film of the peripheral circuit region;
etching the insulator so that a height of the insulator is lower than the height of the first conductive film relative to the upper surface of the semiconductor substrate;
forming an inter-gate insulating film on the impurities-doped first conductive film in the memory cell region and the non-doped first conductive film in the peripheral circuit region;
removing the inter-gate insulating film in the peripheral circuit region while leaving the inter-gate insulating film in the memory cell region; and
forming a second conductive film on the inter-gate insulating film in the memory cell region and on the non-doped first conductive film in the peripheral circuit region,
wherein the second conductive film has a second non-doped polycrystalline silicon film.
10. The method of claim 4 , wherein the impurities include phosphorus.
11. The method of claim 4 , wherein a thickness of the first insulating film in the memory cell region is smaller than a thickness of the second insulating film in the peripheral circuit region.
12. The method of claim 4 further comprising forming a salicide film on the second conductive film.