Method for producing a component comprising a conductor structure that is suitable for use at high frequencies
The invention provides a process for producing a substrate having a conductor arrangement that is suitable for radio-frequency applications, with improved radio-frequency properties. For this purpose, the process includes the steps of: depositing a structured glass layer having at least one opening over a contact-connection region by evaporation coating on the substrate and applying at least one conductor structure to the structured glass layer so that the at least one conductor has electrical contact with the contact-connection region.
1. A process for producing a component suitable for radio-frequency applications, comprising the steps of:
depositing a structured glass layer having at least one opening over a contact-connection region on a substrate by a vacuum deposition process comprising evaporation coating; and
applying at least one conductor structure to the structured glass layer so that the at least one conductor structure is in electrical contact with the contact-connection region, wherein the step of depositing the structured glass layer comprises the steps of:
applying a structured interlayer to cover the contact-connection region;
evaporation coating the structured glass layer to the substrate and the structured interlayer that is present thereon, wherein the structured glass layer has a layer thickness that is less than an interlayer thickness of the structured interlayer; and
removing the structured interlayer so that those regions of the structured glass layer that are located on the structured interlayer are lifted with it.
2. The process as claimed in claim 1 , further comprising applying at least one passive electrical component to the structured glass layer so that the at least one passive electrical component is in contact with the at least one conductor structure.
3. The process as claimed in claim 2 , wherein the at least one passive electrical component is selected from the group consisting of a capacitor, a resistor, a coil, a varistor, a Positive Temperature Coefficient (PTC) thermistor, a Negative Temperature Coefficient (NTC) thermistor, and a filter element.
4. The process as claimed in claim 1 , further comprising repeating the steps of depositing a structured glass layer and of applying at least one conductor structure a number of times.
5. The process as claimed in claim 1 , wherein prior to the application of the structured glass layer by evaporation coating, the process further comprises applying a conductive material to the contact-connection region so that the conductive material projects with respect to regions adjacent to the contact-connection regions and is covered by the structured interlayer.
6. The process as claimed in claim 1 , wherein the step of applying the structured interlayer comprises printing or photolithographic structuring.
7. The process as claimed in claim 1 , wherein the step of applying at least one conductor structure comprises the step of applying electrically conductive material by electroplating, sputtering or evaporation coating.
8. The process as claimed in claim 1 , further comprising applying an interconnect to the substrate prior to the step of depositing the structured glass layer.
9. The process as claimed in claim 1 , wherein the step of applying the at least one conductor structure comprises applying a plurality of structures each having different conductive materials.
10. The process as claimed in claim 1 , further comprising the steps of depositing a final glass layer and producing at least one via in the final glass layer.
11. The process as claimed in claim 10 , further comprising applying a soldering bead to the at least one via.
12. The process as claimed in claim 1 , wherein the substrate comprises a semiconductor substrate with active semiconductor regions, and wherein the step of applying the at least one conductor structure comprises connecting the at least one conductor structure to a connection location of the active semiconductor regions.
13. The process as claimed in claim 12 , wherein each active semiconductor region is arranged on a first side of the substrate, and wherein the structured glass layer is deposited on the first side and the at least one conductor structure is applied to the structured glass layer.
14. The process as claimed in claim 12 , wherein each active semiconductor region is arranged on a first side of the substrate, the first side the opposite side from a second side, and wherein the structured glass layer is deposited on the second side and the at least one conductor structure is applied to the structured glass layer, the process further comprising the step of introducing at least one via through the substrate so that the at least one via is connected to a connection location on the first side.
15. The process as claimed in claim 1 , wherein the step of applying the at least one conductor structure comprises connecting the at least one conductor structure to a via through the substrate.
16. The process as claimed in claim 1 , further comprising holding the substrate at a temperature of between 50° C. and 200° C. during the step of depositing the structured glass layer.
17. The process as claimed in claim 1 , further comprising keeping a pressure at most in the range of 10 −4 mbar during the step of depositing the structured glass layer.
18. The process as claimed in claim 1 , wherein the structured glass layer is applied with a deposition rate of at least 0.1 μm of layer thickness per minute.
19. The process as claimed in claim 1 , further comprising filling the at least one opening with conductive material.
20. The process as claimed in claim 1 , wherein the structured glass layer is deposited on the substrate while the substrate is still joined to a wafer.
21. The process as claimed in claim 1 , wherein the step of depositing the structured glass layer comprises plasma ion assisted deposition (PIAD).