Molded leadframe substrate semiconductor package
A process for forming semiconductor packages comprises partially etching a leadframe matrix, encapsulating it with mold compound, placing a semiconductor die in a leadframe unit and singulating the leadframe matrix. A system for forming semiconductor packages comprises means for partially etching a leadframe matrix, means for encapsulating it with mold compound, means for placing a semiconductor die in a leadframe unit and means for singulating the leadframe matrix.
1. A process of forming individual packaged semiconductor devices comprising:
a. providing a half etched lead frame matrix having some portions of one thickness and other portions having a lesser thickness;
b. encapsulating at least a portion of the half etched lead frame matrix;
c. then mounting at least one semiconductor die in an individual lead frame unit; and
d. singulating the half etched lead frame matrix thereby forming individual packaged semiconductor devices.
2. The process of forming individual packaged semiconductor devices according to claim 1 further wherein providing a half etched lead frame matrix having some portions of one thickness and other portions having a lesser thickness comprising partially etching desired portions of a lead frame matrix thereby forming a half etched lead frame matrix.
3. The process of forming individual packaged semiconductor devices according to claim 1 wherein encapsulating at least a portion for the half etched lead frame matrix comprises:
a. placing the selectively half etched leadframe matrix between a top mold, having a film gate, and a bottom mold; and
b. injecting a mold compound in a liquid state through the film gate such that it encapsulates the selectively half etched leadframe matrix thereby forming a selectively half etched molded leadframe.
4. The process of forming individual packaged semiconductor devices according to claim 1 wherein encapsulating the selectively half etched leadframe matrix in a first mold compound comprises:
a. placing the selectively half etched leadframe matrix between a top mold, having a pincer gate, and a bottom mold; and
b. injecting a mold compound in a liquid state through the pincer gate such that it encapsulates the selectively half etched leadframe matrix thereby forming a selectively half etched molded leadframe.
5. A process of forming individual packaged semiconductor devices comprising:
a. providing a leadframe matrix having a thickness, a top surface and a bottom surface;
b. selectively etching at least one of the top surface and bottom surface thereby forming a selectively half etched leadframe having an etched pattern;
c. mounting the selectively half etched leadframe onto a tape carrier;
d. encapsulating the selectively half etched leadframe in a first mold compound such that the etched pattern is filled with mold compound, thereby forming a selectively half etched molded leadframe;
e. then mounting at least one semiconductor device in at least one individual leadframe;
f. removing the tape carrier; and
g. singulating the selectively half etched molded leadframe thereby forming individual packaged semiconductor devices.
6. The process of forming individual packaged semiconductor devices according to claim 5 wherein encapsulating the selectively half etched leadframe in a first mold compound comprises:
a. placing the selectively half etched leadframe between a top mold, having a film gate, and a bottom mold; and
b. injecting a mold compound in a liquid state through the film gate such that it encapsulates the selectively half etched leadframe thereby forming a selectively half etched molded leadframe.
7. The process of forming individual packaged semiconductor devices according to claim 6 wherein the top mold further comprises a vacuum pipe output.
8. The process of forming individual packaged semiconductor devices according to claim 7 further comprising forming a near vacuum at the vacuum pipe to effectuate even distribution of the first mold compound.
9. The process of forming individual packaged semiconductor devices according to claim 5 wherein encapsulating the selectively half etched leadframe in a first mold compound comprises:
a. placing the selectively half etched leadframe between a top mold, having a pincer gate, and a bottom mold; and
b. injecting a mold compound in a liquid state through the pincer gate such that it encapsulates the selectively half etched leadframe thereby forming a selectively half etched molded leadframe.
10. The process of forming individual packaged semiconductor devices according to claim 9 wherein the top mold further comprises a vacuum pipe output.
11. The process of forming individual packaged semiconductor devices according to claim 10 further comprising forming a near vacuum at the vacuum pipe to effectuate distribution of the first mold compound.
12. The process of forming individual packaged semiconductor devices according to claim 9 further comprising encapsulating the selectively half etched molded leadframe in a second mold compound.
13. The process of forming individual packaged semiconductor devices according to claim 12 wherein mounting at least one semiconductor device comprises mounting the at least one semiconductor device on the selectively half etched molded leadframe and wirebonding such that the at least one semiconductor device is encapsulated by the second mold compound.
14. The process of forming individual packaged semiconductor devices according to claim 5 wherein mounting at least one semiconductor device comprises mounting the at least one semiconductor device in a cavity within the individual leadframe and wirebonding such that the first mold compound encapsulates the at least one semiconductor device.
15. A process of assembling a semiconductor package comprising:
a. selectively etching at least one of a top surface and a bottom surface of a leadframe matrix;
b. mounting a selectively half etched leadframe onto a tape carrier;
c. encapsulating the selectively half etched leadframe in a first mold compound such that an etched pattern is filled with mold compound, thereby forming a selectively half etched molded leadframe;
d. mounting at least one semiconductor device in at least one individual leadframe;
e. removing the tape carrier; and
f. singulating the selectively half etched molded leadframe thereby forming individual packaged semiconductor devices.
16. The process of assembling a semiconductor package according to claim 15 wherein encapsulating the selectively half etched leadframe in a first mold compound comprises:
a. means for placing the selectively half etched leadframe between a top mold, having a film gate, and a bottom mold; and
b. means for injecting a mold compound in a liquid state through the film gate such that it encapsulates the selectively half etched leadframe thereby forming a selectively half etched molded leadframe.
17. The process of assembling a semiconductor package according to claim 16 wherein the top mold further comprises a vacuum pump output.
18. The process of assembling a semiconductor package according to claim 17 further comprising forming a near vacuum for effectuating distribution of mold compound.
19. The process of assembling a semiconductor package according to claim 15 wherein encapsulating the selectively half etched leadframe in a first mold compound comprises:
a. placing the selectively half etched leadframe between a top mold, having a pincer gate, and a bottom mold; and
b. injecting a mold compound in a liquid state through the pincer gate such that it encapsulates the selectively half etched leadframe thereby forming a selectively half etched molded leadframe.
20. The process of assembling a semiconductor package according to claim 19 wherein the top mold further comprises a vacuum pump output.
21. The process of assembling a semiconductor package according to claim 20 further comprising forming a near vacuum for effectuating distribution of mold compound.