Silicon waveguide photodetector and related method
A photodetector device, comprises an optical input, a nanoscale silicon waveguide and an electrical output. The waveguide is a high-contrast waveguide, with a refractive index contrast with the outside environment of more that 10%. The optical mode distribution across the waveguide has a peak intensity in correspondence of surface states of the nanoscale silicon waveguide. A related method is also disclosed.
1. A photodetector device, comprising:
an optical input:
a nanoscale silicon waveguide having a refractive index contrast with the outside environment of more that 10%, the nanoscale silicon waveguide connected with the optical input; and
an electrical output connected with the nanoscale silicon waveguide, wherein optical mode distribution across the nanoscale silicon waveguide has a peak intensity in correspondence of surface states of the nanoscale silicon waveguide.
2. The photodetector device of claim 1 , wherein the electrical output is originated due to surface state absorption of the nanoscale silicon waveguide.
3. The photodetector device of claim 1 , wherein the optical input has a wavelength ranging from ultraviolet to infrared.
4. The photodetector device of claim 3 , wherein the optical input has a near infrared wavelength.
5. The photodetector device of claim 1 , wherein the nanoscale silicon waveguide is connected to the optical input through a grating coupler.
6. The photodetector device of claim 1 , wherein the nanoscale silicon waveguide comprises an optically active area.
7. The photodetector device of claim 6 , wherein the optically active area of the nanoscale silicon waveguide is an electrically contacted optically active area.
8. The photodetector device of claim 7 , wherein a bias voltage is applied to the electrically contacted optically active area.
9. The photodetector device of claim 8 , wherein the electrically contacted optically active area is electrically contacted to a metal contact through a plurality of conductive contacting arms.
10. The photodetector device of claim 1 , wherein the nanoscale silicon waveguide is a slot waveguide.
11. The photodetector device of claim 1 , wherein the nanoscale silicon waveguide is a ridge waveguide.
12. The photodetector device of claim 11 , further comprising a first voltage contact and a second voltage contact, wherein the ridge waveguide contacts the first voltage contact by way of a plurality of conductive contacting arms, and the second voltage contact is the electrical output of the photodetector device.
13. A method for detecting light in a ultraviolet to infrared range through a nanoscale silicon waveguide, comprising:
inputting light to a nanoscale silicon waveguide having a refractive index contrast with the outside environment of more that 10%, an optical mode distribution across the nanoscale silicon waveguide being configured so that the optical mode has a peak intensity in correspondence of surface states of the nanoscale silicon waveguide; and
outputting an electrical signal from the nanoscale silicon waveguide.
14. The method of claim 13 , wherein detected light has a near infrared wavelength.
15. The method of claim 13 , wherein light is input to the nanoscale silicon waveguide through a grating coupler.
16. The method of claim 13 , further comprising associating a first and a second metal contact with the nanoscale silicon waveguide, wherein the first metal contact is connected to the nanoscale silicon waveguide through a plurality of conductive arms and the second metal contact is for the outputting of the electrical signal from the nanoscale silicon waveguide.
17. The method of claim 16 , further comprising applying a bias voltage to the first metal contact.
18. The method of claim 13 , wherein the nanoscale silicon waveguide is a slot waveguide or a ridge waveguide.