Array substrate having color filter on thin film transistor structure for LCD device and method of fabricating the same
An array substrate device includes a gate line formed on a substrate extending along a first direction having a gate electrode, a data line formed on the substrate extending along a second direction having a data pad disposed apart from a first end of the data line, the data and gate lines defining a pixel region, a gate pad formed on the substrate disposed apart from a first end of the gate line, a thin film transistor formed at a crossing region of the gate and data lines and including the gate electrode, a semiconductor layer, a source electrode, and a drain electrode, a black matrix overlapping the thin film transistor, the gate line, and the data line except for a first portion of the drain electrode, a first pixel electrode at the pixel region contacting the first portion of the drain electrode and the substrate, a color filter on the first pixel electrode at the pixel region, and a second pixel electrode on the color filter contacting the first pixel electrode.
1. A method of fabricating a liquid crystal display device, the method comprising:
preparing a first substrate and a second substrate, the first substrate having a display area, a non-display area and a boundary area, the boundary area disposed between the display area and the non-display area;
forming a plurality of gate lines on the first substrate within the display area;
forming a plurality of gate pads on the first substrate within the non-display area;
forming a plurality of gate link lines on the first substrate disposed in the non-display area and in the boundary area connecting the gate lines to the gate pads;
forming a plurality of data lines crossing the gate lines to define a plurality of pixel regions;
forming a plurality of thin film transistors adjacent to the crossing of the gate and data lines;
forming a first insulating layer on the thin film transistors;
forming a color filter layer on the first insulating layer in the pixel region;
forming a second insulating layer on the color filter layer;
forming a contact hole passing through at least the first and second insulating layers;
forming a light-shielding pattern in the non-display area and the boundary area corresponding to the gate link lines and spaces between the gate link lines;
forming a pixel electrode on the second insulating layer in the pixel region, the pixel electrode electrically connected to a drain electrode of the thin film transistor through the contact hole; and
attaching the first and second substrates together.
2. The method according to claim 1 , wherein the second insulating layer is formed of an inorganic insulating material.
3. The method according to claim 2 , wherein the first insulating layer is formed of an inorganic insulating material.
4. The method according to claim 1 , wherein the color filter layer is directly formed on the first insulating layer.
5. The method according to claim 1 , wherein the second insulating layer is directly formed on the color filter layer.
6. The method according to claim 1 , further comprising forming a black matrix on the first insulating layer over the thin film transistor.
7. The method according to claim 6 , wherein the black matrix is formed of an organic material.