System and method for memory phase shedding
Embodiments of the invention supply power to DRAM or other memory devices with a multi-phase voltage regulator. A power controller coupled to the multi-phase voltage regulator causes one or more phases of the multi-phase voltage regulator to be activated or deactivated (shed) according to predetermined criteria. Embodiments of the invention thus improve power management by providing one or more reduced power states for the memory devices. Other embodiments are described.
1. A method for power management, comprising:
activating all phases of a multi-phase memory voltage regulator;
determining whether to decrease power supplied to at least one memory device, wherein determining whether to decrease the power supplied to the at least one memory device includes determining the extent to which a plurality of memory sockets are populated;
if it is determined to decrease the power supplied to the at least one memory device, deactivating at least one phase of the multi-phase memory voltage regulator
after the deactivating, setting a number of activated phases equal to a maximum number of phases;
determining whether a central processing unit (CPU) associated with the multi-phase memory voltage regulator is in an active state or an idle state;
if the CPU is in the idle state, deactivating at least one phase of the multi-phase memory voltage regulator;
determining whether a power demand is less than a predetermined power threshold; and
if the power demand is less than the predetermined threshold and the number of activated phases is greater than one, deactivating at least one phase of the multi-phase memory voltage regulator.
2. The method of claim 1 , wherein the activating includes transmitting an activation message to the multi-phase memory voltage regulator.
3. The method of claim 1 , wherein the deactivating includes transmitting a deactivation message to the multi-phase memory voltage regulator.
4. The method of claim 1 , wherein determining the extent to which the plurality of memory sockets are populated includes receiving a Serial Presence Detect (SPD) message from the at least one memory device.
5. The method of claim 1 , further comprising, if the CPU is in the active state, activating the maximum number of phases of the multi-phase memory voltage regulator.
6. The method of claim 1 , wherein the determining whether the CPU associated with the multi-phase memory voltage regulator is in the active state or the idle state includes:
reading a CPU socket C-state; and
associating the CPU socket C-state with one of the active state and the idle state.
7. The method of claim 1 , wherein determining whether to decrease the power supplied to the at least one memory device includes determining whether a central processing unit (CPU) associated with the multi-phase memory voltage regulator is in an active state or an idle state.
8. The method of claim 7 , wherein the determining whether the central processing unit (CPU) associated with the multi-phase memory voltage regulator is in the active state or the idle state includes:
reading a CPU socket C-state; and
associating the CPU socket C-state with one of the active state and the idle state.
9. The method of claim 1 , further comprising reducing the predetermined power threshold to a level sustainable by at least one remaining phase after deactivating at least one phase of the multi-phase memory voltage regulator.
10. The method of claim 9 , further comprising clamping a maximum memory throughput to a level that will not exceed the predetermined power threshold.
11. The method of claim 1 , further comprising:
determining whether a power demand is less than a predetermined power threshold; and
if the power demand is greater than the predetermined power threshold and the number of activated phases is less than the maximum number of phases set, activating at least one phase of the multi-phase memory voltage regulator.
12. The method of claim 11 , further comprising
raising the predetermined power threshold to a level sustainable by the at least one additionally activated phase; and
determining whether the at least one additionally activated phase is operational.
13. The method of claim 12 , further comprising, if the at least one additionally activated phase is operational, clamping a maximum memory throughput to a level that will not exceed the predetermined power threshold.