Multi-printed etch mask process to pattern features

1. A method for patterning fine features using multiple jet-printed etch masks, comprising:

forming an initial feature in a material by patterning a first jet-printed etch mask and etching exposed material; and

re-shaping the initial feature by patterning at least one additional jet-printed etch mask and etching further exposed material.

2. The method as set forth in claim 1 , wherein the initial feature is re-shaped to reduce a width of the initial feature and increase a resolution of the initial feature.

3. The method as set forth in claim 1 , wherein a width of the initial feature is about forty microns or greater and a width of the re-shaped feature is less than forty microns.

4. The method as set forth in claim 1 , wherein a width of the re-shaped feature is one of about twenty microns and about ten microns.

5. The method as set forth in claim 1 , wherein the first jet-printed etch mask and the at least one additional jet-printed etch mask are patterned parallel, orthogonal, or angled with respect to each other.

6. The method as set forth in claim 1 , further including:

depositing a thin film on a substrate; and

patterning the initial feature on the thin film.

7. The method as set forth in claim 1 , wherein the initial feature is formed from a metalized layer.

8. The method as set forth in claim 1 , further including aligning the first etch mask and the at least one additional jet-printed etch mask via substantially similar and different alignment marks.

9. The method as set forth in claim 1 , further including forming alignment marks for the at least one additional jet-printed etch mask with the first jet-printed etch mask.

10. The method as set forth in claim 1 , further including forming at least one of a protective layer and a reflective layer over the re-shape feature.

11. The method as set forth in claim 1 , further including:

jetting the at least one additional jet-printed etch mask to partially overlap the initial feature;

etching the exposed portion of the initial feature; and

stripping the at least one additional jet-printed etch mask to form the re-shaped feature.

12. The method as set forth in claim 11 , further including using one of an acid, a solvent, a gas, a base, a laser, and a plasma to etch the exposed portion of the initial feature.

13. The method as set forth in claim 11 , further including using Microelectromechanical Systems (MEMS) technology to etch the exposed portion of the initial feature.

14. A method for patterning fine features using multiple jet-printed etch masks, comprising:

patterning a first jet-printed etch mask on a material;

removing unmasked portions of the material;

stripping the first jet-printed etch mask to pattern a low-resolution feature;

patterning a second jet-printed etch mask over a portion of the low-resolution feature;

removing unmasked portions of the low-resolution feature; and

stripping the second jet-printed etch mask to form a high-resolution feature.

15. The method as set forth in claim 14 , wherein a width of the high-resolution feature is less than forty microns in width.

16. The method as set forth in claim 14 , further including depositing a sacrificial layer over the material prior to at least one of patterning the first jet-printed etch mask and the second jet-printed etch mask.

17. A method for patterning features of a thin film transistor (TFT) using multiple jet-printed etch masks, comprising:

jet-printing a first mask on a material to pattern a low-resolution electrode of the TFT;

etching unmasked portions of the material;

removing the first mask to form the low-resolution electrode;

jet-printing a second mask that overlaps a portion of the low-resolution electrode;

etching unmasked portions of the low-resolution electrode; and

removing the second mask to form a high-resolution electrode.

18. The method as set forth in claim 17 , wherein the high-resolution electrode is a source-drain electrode and further including forming a gate mask through a single mask process.

19. The method as set forth in claim 17 , wherein the TFT is associated with at least one of a smaller width, reduced overlap capacitance, and greater display aperture ratio relative to a TFT formed through single jet-printed etch mask.

20. The method as set forth in claim 17 , wherein a line width of the high-resolution source-drain electrode is less than 20 microns.