Electro-chemical mechanical planarization pad with uniform polish performance
A polishing pad includes at least one conductive polishing element supported by a compressible under layer having conductive patterning therein, the conductive patterning adapted to permit coupling of a potential to the conductive polishing element; a guide plate above the compressible under layer, the guide plate having a hole through which the polishing element passes and further having a cathodic element connected thereto; and a slurry distribution layer adhered to the guide plate opposite the compressible under layer. The polishing pad may further include a proton exchange membrane placed over the cathodic element. A semiconductor wafer having a metal film thereon may be polished using the polishing pad by placing the wafer in contact with the polishing element, applying anodic current to the polishing element and cathodic current to the cathodic element, and polishing with an anodic solution. For copper films, a sulfuric acid-copper sulfate solution may be used.
1. A polishing pad, comprising at least one conductive polishing element supported by a compressible under layer having conductive patterning therein, the conductive patterning adapted to permit coupling of a potential to the conductive polishing element; a guide plate above the compressible under layer, the guide plate having a hole through which the polishing element passes and further having a cathodic element connected thereto; and a slurry distribution layer adhered to the guide plate opposite the compressible under layer.
2. The polishing pad of claim 1 , further comprising a proton exchange membrane placed over the cathodic element.
3. The polishing pad of claim 1 , wherein the conductive polishing element is made of conductive polymer.
4. The polishing pad of claim 1 , wherein the conductive polishing element is made of graphite.
5. The polishing pad of claim 1 , wherein the conductive polishing element is made of a combination of graphite and a conducting or non-conducting polymer.
6. The polishing pad of claim 1 , wherein the conductive polishing element is coated with a non-conducting material except at its top and bottom.
7. The polishing pad of claim 1 , wherein the conductive polishing element has a top portion and a base, a diameter of the base being larger than a diameter of the top portion and the hole in the guide plate.
8. The polishing pad of claim 1 , wherein the conductive polishing element is adapted to make rolling contact with a metal film on an article undergoing polishing.
9. The polishing pad of claim 1 , further comprising a combination of electrically conductive and electrically non-conductive polishing elements.
10. The polishing pad of claim 9 , wherein the guide plate has a number of thru holes arranged in a pre-determined pattern for accommodating the polishing elements.
11. The polishing pad of claim 9 , wherein the conductive polishing elements are made of one or more of a conductive polymer, graphite or combination thereof.
12. The polishing pad of claim 9 , wherein the non-conductive polishing elements are made of a thermoplastic polymer.
13. The polishing pad of claim 9 , wherein the conductive polishing elements and non-conductive polishing elements have the same shape.
14. The polishing pad of claim 9 , wherein the conductive polishing elements and non-conductive polishing elements have different shapes.
15. The polishing pad of claim 1 , wherein the conductive patterning is made of copper.
16. The polishing pad of claim 1 , wherein the guide plate is made of polycarbonate.
17. The polishing pad of claim 1 , wherein the slurry distribution layer is a polyethylene open cell foam having a pore size of approximately 10-50 microns.
18. The polishing pad of claim 1 , wherein the compressible under layer comprises one of: a polyurethane foam, a rubber foam, a solid polyurethane, or a solid rubber.
19. A method of polishing a semiconductor wafer having a metal film thereon, comprising polishing the wafer with a polishing pad having at least one conductive polishing element supported by a compressible under layer with conductive patterning therein, the conductive patterning adapted to permit coupling of a potential to the conductive polishing element; a guide plate above the compressible under layer, the guide plate having a hole through which the polishing element passes and further having a cathodic element connected thereto; and a slurry distribution layer adhered to the guide plate opposite the compressible under layer; said polishing including placing the wafer in contact with the polishing element, applying anodic current to the polishing element and cathodic current to the cathodic element, and polishing with an anodic solution.
20. A method of polishing a semiconductor wafer having a copper film thereon, comprising polishing the wafer with a polishing pad having at least one conductive polishing element supported by a compressible under layer with conductive patterning therein, the conductive patterning adapted to permit coupling of a potential to the conductive polishing element; a guide plate above the compressible under layer, the guide plate having a hole through which the polishing element passes and further having a cathodic element connected thereto; and a slurry distribution layer adhered to the guide plate opposite the compressible under layer; said polishing including placing the wafer in contact with the polishing element and supplying a sulfuric acid-copper sulfate solution while applying anodic current to the polishing element and cathodic current to cathodic element.