Semiconductor device and method for manufacturing the same
A semiconductor device includes a first conductor disposed on a semiconductor substrate; an oxygen-containing insulation film disposed on the semiconductor substrate and on the first conductor, the insulation film having a contact hole which extends to the first conductor and a trench which is connected to an upper portion of the contact hole; a zirconium oxide film disposed on a side surface of the contact hole and a side surface and a bottom surface of the trench; a zirconium film disposed on the zirconium oxide film inside the contact hole and inside the trench; and a second conductor composed of Cu embedded into the contact hole and into the trench.
1. A semiconductor device comprising:
a first conductor disposed on a semiconductor substrate;
an oxygen-containing insulation film disposed on the first conductor, the oxygen-containing insulation film having a contact hole extending through a thickness of the oxygen-containing insulation film and extended to an upper portion of the first conductor;
a zirconium oxide film disposed on a first side surface of the contact hole;
a zirconium film disposed on the zirconium oxide film inside the contact hole, and
a second conductor embedded into the contact hole.
2. The semiconductor device according to claim 1 , further comprising,
a trench formed on an upper portion of the contact hole,
wherein the zirconium oxide film is disposed on a second side surface of the trench and a bottom surface of the trench.
3. The semiconductor device according to claim 1 , wherein the first conductor includes a first conductor plug or a first interconnect line.
4. The semiconductor device according to claim 2 , wherein the second conductor includes a second conductor plug embedded into the contact hole and a second interconnect line embedded in the trench.
5. The semiconductor device according to claim 1 , wherein the zirconium film is disposed on a bottom of the contact hole, and the second conductor is connected to the first conductor through the zirconium film.
6. The semiconductor device according to claim 1 , wherein the second conductor is in contact with the first conductor at the bottom of the contact hole.
7. The semiconductor device according to claim 1 , wherein the oxygen-containing insulation film is a porous insulation film.