Method for manufacturing display device
View Patent ↗It is an object of the present invention to provide a method for manufacturing a highly reliable display device with a preferable yield. A method for manufacturing a display device according to the invention comprises the steps of: forming a first electrode including a conductive material added with a material which prevents crystallization; forming a layer containing an organic compound over the first electrode by heating the first electrode under a reduced pressure at temperatures of 350° C. or higher; and forming a second electrode over the layer containing an organic compound. It is preferable to perform the heat treatment at temperatures of 350° C. or higher, preferably, 375° C. or higher for 12 hours or longer. When the first electrode is formed by using indium tin oxide containing silicon oxide, a highly display device can be manufactured.
1. A method for manufacturing a display device comprising the steps of:
forming an interlayer insulating layer over a substrate by an application method;
removing an edge portion of the interlayer insulating layer;
forming a first electrode comprising a conductive material added with a material which prevents crystallization over the interlayer insulating layer, the first electrode being amorphous;
polishing the first electrode by using a CMP method after forming the first electrode;
heating the first electrode under a pressure within a range of from 1×10 −6 Pa to 1×10 −2 Pa at a temperature of 350° C. or higher after forming the first electrode and after polishing the first electrode;
forming a layer containing an organic compound over the first electrode after heating the first electrode; and
forming a second electrode over the layer containing the organic compound.
2. A method for manufacturing a display device according to claim 1 , wherein the first electrode comprises indium tin oxide as the conductive material and silicon oxide as the material which prevents crystallization.
3. A method for manufacturing a display device according to claim 1 , wherein the step of heating the first electrode is performed for 12 hours or longer.
4. A method for manufacturing a display device according to claim 1 , wherein the application method is one of a spin coating method and a droplet discharge method.
5. A method for manufacturing a display device according to claim 1 , further comprising, after heating the first electrode, forming an insulating layer to cover an end portion of the first electrode; and
heating the insulating layer after forming the insulating layer.
6. A method for manufacturing a display device comprising the steps of:
forming an interlayer insulating layer over a substrate;
removing an edge portion of the interlayer insulating layer;
forming a first electrode, comprising a conductive material added with a material which prevents crystallization, over the interlayer insulating layer, the first electrode being amorphous;
polishing the first electrode by using a CMP method after forming the first electrode;
heating the first electrode under a pressure within a range of from 1×10 −6 Pa to 1×10 −2 Pa at a temperature of 350° C. or higher after forming the first electrode and after polishing the first electrode;
forming an insulating layer to cover an end portion of the first electrode;
forming a layer containing an organic compound over the first electrode after heating the first electrode and forming the insulating layer; and
forming a second electrode over the layer containing the organic compound.
7. A method for manufacturing a display device according to claim 6 , wherein the first electrode comprises indium tin oxide as the conductive material and silicon oxide as the material which prevents crystallization.
8. A method for manufacturing a display device according to claim 6 , wherein the step of heating the first electrode is performed for 12 hours or longer.
9. A method for manufacturing a display device according to claim 6 , further comprising, after heating the first electrode, heating the insulating layer after forming the insulating layer.
10. A method for manufacturing a display device comprising the steps of:
forming a thin film transistor having a wiring;
forming an insulating film containing hydrogen over the thin film transistor;
forming a first electrode comprising a conductive material added with a material which prevents crystallization so as to be in contact wit the wiring, the first electrode being amorphous;
performing hydrogenation of the thin film transistor and dehydration of the first electrode simultaneously by heating the thin film transistor, the insulating film and the first electrode under a pressure within a range of from 1×10 −6 Pa to 1×10 −2 Pa at a temperature of 350° C. or higher after forming the thin film transistor, the insulating film and the first electrode;
forming a layer containing an organic compound over the first electrode after heating the thin film transistor, the insulating film and the first electrode; and
forming a second electrode over the layer containing the organic compound.
11. A method for manufacturing a display device according to claim 10 , wherein the first electrode comprises indium tin oxide as the conductive material and silicon oxide as the material which prevents crystallization.
12. A method for manufacturing a display device according to claim 10 , wherein the step of heating the thin film transistor, the insulating film and the first electrode is performed for 12 hours or longer.
13. A method for manufacturing a display device comprising the steps of:
forming a thin film transistor having a wiring;
forming an insulating film containing hydrogen over the thin film transistor;
forming a first electrode comprising a conductive material added with a material which prevents crystallization so as to be in contact with the wiring, the first electrode being amorphous;
performing hydrogenation of the thin film transistor and dehydration of the first electrode simultaneously by heating the thin film transistor, the insulating film, and the first electrode under a pressure within a range of from 1×10 −6 Pa to 1×10 −2 Pa at a temperature of 350° C. or higher after forming the thin film transistor, the insulating film, and the first electrode;
forming an insulating layer to cover the thin film transistor, the wiring and an end portion of the first electrode;
forming a layer containing an organic compound over the first electrode after heating the thin film transistor, the insulating film, and the first electrode, and forming the insulating layer; and
forming a second electrode over the layer containing an organic compound.
14. A method for manufacturing a display device according to claim 13 , wherein the first electrode comprises indium tin oxide as the conductive material and silicon oxide as the material which prevents crystallization.
15. A method for manufacturing a display device according to claim 13 , wherein the step of heating the thin film transistor, the insulating film, and the first electrode is performed for 12 hours or longer.
16. A method for manufacturing a display device comprising the steps of:
forming an interlayer insulating layer over a substrate by an application method;
removing an edge portion of the interlayer insulating layer;
forming a first electrode over the interlayer insulating layer, the first electrode being amorphous;
polishing the first electrode by using a CMP method after forming the first electrode;
heating the first electrode under a pressure within a range of from 1×10 −6 Pa to 1×10 −2 Pa at a temperature of 350° C. or higher at which the first electrode is not crystallized after forming the first electrode and after polishing the first electrode;
forming a layer containing an organic compound over the first electrode after heating the first electrode; and
forming a second electrode over the layer containing the organic compound.
17. A method for manufacturing a display device according to claim 16 , wherein the first electrode comprises indium tin oxide comprising silicon oxide.
18. A method for manufacturing a display device according to claim 16 , wherein the step of heating the first electrode is performed for 12 hours or longer.
19. A method for manufacturing a display device according to claim 16 , wherein the application method is one of a spin coating method and a droplet discharge method.
20. A method for manufacturing a display device according to claim 16 , further comprising, after heating the first electrode, forming an insulating layer to cover an end portion of the first electrode; and
heating the insulating layer after forming the insulating layer.
21. A method for manufacturing a display device comprising the steps of:
forming an interlayer insulating layer over a substrate;
removing an edge portion of the interlayer insulating layer;
forming a first electrode over the interlayer insulating layer, the first electrode being amorphous;
polishing the first electrode by using a CMP method after forming the first electrode;
heating the first electrode under a pressure within a range of from 1×10 −6 Pa to 1×10 −2 Pa at a temperature of 350° C. or higher at which the first electrode is not crystallized after forming the first electrode and after polishing the first electrode;
forming an insulating layer to cover an end portion of the first electrode;
forming a layer containing an organic compound over the first electrode after heating the first electrode and forming the insulating layer; and
forming a second electrode over the layer containing the organic compound.
22. A method for manufacturing a display device according to claim 21 , wherein the first electrode comprises indium tin oxide comprising silicon oxide.
23. A method for manufacturing a display device according to claim 21 , wherein the step of heating the first electrode is performed for 12 hours or longer.
24. A method for manufacturing a display device according to claim 21 , further comprising, after heating the first electrode, heating the insulating layer after forming the insulating layer.
25. A method for manufacturing a display device comprising the steps of:
forming a thin film transistor having a wiring;
forming an insulating film containing hydrogen over the thin film transistor;
forming a first electrode so as to be in contact with the wiring, the first electrode being amorphous;
performing hydrogenation of the thin film transistor and dehydration of the first electrode simultaneously by heating the thin film transistor, the insulating film and the first electrode under a pressure within a range of from 1×10 −6 Pa to 1×10 −2 Pa at a temperature of 350° C. or higher at which the first electrode is not crystallized after forming the thin film transistor, the insulating film and the first electrode;
forming a layer containing an organic compound over the first electrode after heating the thin film transistor, the insulating film and the first electrode; and
forming a second electrode over the layer containing the organic compound.
26. A method for manufacturing a display device according to claim 25 , wherein the first electrode comprises indium tin oxide comprising silicon oxide.
27. A method for manufacturing a display device according to claim 25 , wherein the step of heating the thin film transistor, the insulating film and the first electrode is performed for 12 hours or longer.
28. A method for manufacturing a display device comprising the steps of:
forming a thin film transistor having a wiring;
forming an insulating film containing hydrogen over the thin film transistor;
forming a first electrode so as to be in contact with the wiring, the first electrode being amorphous;
performing hydrogenation of the thin film transistor and dehydration of the first electrode simultaneously by heating the thin film transistor, the insulating film, the first electrode under a pressure within a range of from 1×10 −6 Pa to 1×10 −2 Pa at a temperature of 350° C. or higher at which the first electrode is not crystallized after forming the thin film transistor, the insulating film, the first electrode;
forming an insulating layer to cover the thin film transistor, the wiring and an end portion of the first electrode;
forming a layer containing an organic compound over the first electrode after heating the thin film transistor, the insulating film, the first electrode and forming the insulating layer; and
forming a second electrode over the layer containing an organic compound.
29. A method for manufacturing a display device according to claim 28 , wherein the first electrode comprises indium tin oxide comprising silicon oxide.
30. A method for manufacturing a display device according to claim 28 , wherein the step of heating the thin film transistor, the insulating film, the first electrode is performed for 12 hours or longer.