Method of recovering valuable material from exhaust gas stream of a reaction chamber

1. A method of cleaning a semiconductor processing chamber containing ruthenium deposits, comprising:

introducing a cleaning gas into the semiconductor processing chamber, the semiconductor processing chamber having a remote plasma source coupled thereto;

measuring an impedance of a plasma wherein the measured plasma is located at a position between the remote plasma source and the semiconductor processing chamber;

measuring a concentration of ruthenium in an exhaust of the semiconductor processing chamber; and

stopping a flow of the cleaning gas based on the measured impedance and the measured concentration.

2. The method of claim 1 , further comprising condensing exhaust gas in a reclamation chamber to collect ruthenium in the exhaust gas.

3. The method of claim 2 , wherein the reclamation chamber includes a plurality of baffles that are alternately cooled and heated.

4. The method of claim 1 , wherein the flow of cleaning gas is stopped when the measured impedance variation is greater than 5 percent.

5. A method for cleaning a processing chamber, comprising:

measuring an impedance of a plasma provided to the processing chamber during a deposition process and determining whether the measured impedance is equal to a preselected impedance value wherein, the measured plasma is located at a position between the processing chamber and a remote plasma source coupled thereto;

introducing a cleaning gas comprising ozone into the processing chamber after the measured impedance is equal to the preselected impedance value;

vaporizing a ruthenium containing deposit on a surface of the processing chamber to form a ruthenium containing gas mixture; and

flowing the gas mixture through an analyzer and into an exhaust collection assembly.

6. The method of claim 5 , further comprising measuring a concentration of ruthenium using the analyzer.

7. The method of claim 5 , further comprising condensing the gas mixture in a reclamation chamber to collect ruthenium in the gas mixture.

8. The method of claim 5 , wherein the measuring an impedance is performed with a VI probe.

9. The method of claim 5 , wherein the analyzer is an IR spectrometer.

10. A method for cleaning a processing chamber, comprising:

measuring an impedance of a plasma provided to the processing chamber during a deposition process and determining whether the impedance is equal to a preselected impedance value, wherein the impedance of the plasma is measured and wherein the measured plasma is located at a location between the processing chamber and a remote plasma source coupled thereto;

introducing a cleaning gas into the processing chamber after the impedance of the plasma is equal to the preselected impedance value;

vaporizing a ruthenium containing deposit on a surface of the processing chamber to form a ruthenium containing gas mixture;

flowing the gas mixture through an analyzer and into an exhaust collection assembly; and

measuring a concentration of ruthenium.

11. A method for cleaning a processing chamber, comprising:

measuring an impedance of a plasma provided to the processing chamber with a VI probe during a deposition process and determining whether the measured impedance is equal to a preselected impedance value wherein, the measured plasma is located at a position between the processing chamber and a remote plasma source coupled thereto;

introducing a cleaning gas comprising ozone into the processing chamber after the measured impedance of the plasma is equal to the preselected impedance value;

vaporizing a ruthenium containing deposit on a surface of the processing chamber to form a ruthenium containing gas mixture;

flowing the gas mixture through an IR spectrometer and into a reclamation chamber, the IR spectrometer adapted to measure the concentration of ruthenium in the gas mixture;

condensing the gas mixture in the reclamation chamber to collect ruthenium in the gas mixture; and

stopping a flow of cleaning gas into the processing chamber based on the measured impedance of the plasma and the measured concentration of ruthenium in the gas mixture.