Electromagnetic radiation sensor and method of manufacture
A method of forming a semiconductor sensor in one embodiment includes providing a substrate, forming a reflective layer on the substrate, forming a sacrificial layer on the reflective layer, forming an absorber layer with a thickness of less than about 50 nm on the sacrificial layer, forming an absorber in the absorber layer integrally with at least one suspension leg, and removing the sacrificial layer.
1. A method of forming a semiconductor sensor comprising:
providing a substrate;
forming a reflective layer on the substrate;
forming a sacrificial layer on the reflective layer;
forming an absorber layer with a thickness of less than about 50 nm on the sacrificial layer;
forming an absorber in the absorber layer integrally with at least one suspension leg; and
removing the sacrificial layer.
2. The method of claim 1 , further comprising:
forming at least one channel in the sacrificial layer; and
forming at least one conductive pillar within the at least one channel, wherein forming an absorber comprises forming at least a portion of the at least one suspension leg on the at least one conductive pillar.
3. The method of claim 1 , wherein forming an absorber layer comprises forming an absorber layer with a thickness of about 10 nm on the sacrificial layer.
4. The method of claim 1 , wherein forming an absorber layer comprises:
exposing a surface of the sacrificial layer to a first self-terminating reactant; and
exposing the surface of the sacrificial layer to a second self-terminating reactant after exposing the surface of the sacrificial layer to the first self-terminating reactant.
5. A complementary metal oxide semiconductor (CMOS) sensor device comprising:
a complementary metal oxide semiconductor (CMOS) substrate;
at least one reflective component formed on the substrate; and
at least one absorber spaced apart from the at least one reflective component, the at least one absorber formed by atomic layer deposition.
6. The sensor device of claim 5 , wherein the at least one absorber has a maximum thickness of less than 50 nm.
7. The sensor device of claim 6 , wherein the at least one absorber has a maximum thickness of about 10 nm.
8. The sensor device of claim 6 , wherein the at least one absorber is spaced apart from the at least one reflective component by about 2.5 μm.
9. The sensor device of claim 5 , further comprising:
at least one electrically conductive pillar extending upwardly from the CMOS substrate; and
at least one suspension leg supported by the at least one pillar, the at least one suspension leg supporting the at least one absorber.
10. The sensor device of claim 9 , wherein the at least one suspension leg is formed by atomic layer deposition.
11. The sensor device of claim 5 , further comprising:
at least one suspension leg extending upwardly from the CMOS substrate, the at least one suspension leg supporting the at least one absorber.
12. The sensor device of claim 11 , wherein the at least one suspension leg is formed by atomic layer deposition.
13. The sensor device of claim 5 , wherein:
the at least one reflective component comprises a plurality of reflective components; and
the at least one absorber comprises a plurality of absorbers formed by atomic layer deposition.
14. The sensor device of claim 5 , wherein the at least one absorber is formed from at least one of the group of metals and their alloys consisting of titanium and platinum.
15. A complementary metal oxide semiconductor (CMOS) sensor device comprising:
a complementary metal oxide semiconductor (CMOS) substrate;
at least one reflective component formed on the substrate; and
at least one absorber spaced apart from the at least one reflective component, the at least one absorber including a maximum thickness of less than 50 nm and exhibiting a good noise-equivalent temperature difference (NETD).
16. The sensor device of claim 15 , wherein the at least one absorber is formed by atomic layer deposition.
17. The sensor device of claim 16 , wherein the at least one absorber has a maximum thickness of about 10 nm.
18. The sensor device of claim 15 , wherein the at least one absorber is spaced apart from the at least one reflective component by about 2.5 μm.
19. The sensor device of claim 15 , further comprising:
at least one suspension leg supporting the at least one absorber above the at least one reflective component.
20. The sensor device of claim 19 , wherein the at least one suspension leg is formed by atomic layer deposition.
21. The sensor device of claim 20 , wherein:
the at least one reflective component comprises a plurality of reflective components; and
the at least one absorber comprises a plurality of absorbers formed by atomic layer deposition.
22. The sensor device of claim 15 , wherein the at least one absorber is formed from at least one of the group of metals and their alloys consisting of titanium and platinum.