Composition for forming anti-reflective coating for use in lithography
There is provided a composition for forming anti-reflective coating for anti-reflective coating that has a good absorption of light at a wavelength utilized for manufacturing a semiconductor device, that exerts a high protection effect against light reflection, that has a high dry etching rate compared with the photoresist layer. Concretely, the composition for forming anti-reflective coating contains a triazine trione compound, oligomer compound or polymer compound having hydroxyalkyl structure as substituent on nitrogen atom.
1. A composition for forming anti-reflective coating, the composition comprising:
a triazine trione oligomer compound having hydroxyalkyl structure as substituent on nitrogen atom, a triazine trione polymer compound having hydroxyalkyl structure as substituent on nitrogen atom or a mixture thereof; wherein the triazine trione oligomer compound having hydroxyalkyl structure as substituent on nitrogen atom, or the triazine trione polymer compound having hydroxyalkyl structure as substituent on nitrogen atom is a triazine trione oligomer compound, triazine trione polymer compound, or mixture thereof having a structure in which at least two triazine trione rings are linked through a linking group of formula (4) or (5) on the nitrogen atoms:
wherein A 1 , A 2 and A 3 are independently of one another hydrogen atom, methyl or ethyl, each Y is independently a direct bond or —C(═O)—, Ar is benzene ring or naphthalene ring which may be substituted with C 1-6 alkyl, phenyl, naphthyl, halogen atom, C 1-6 alkoxycarbonyl, nitro, carboxy, cyano, C 1-6 alkoxy, hydroxy, thiol, C 1-6 alkylthio or amino, Q is C 1-6 alkyl, C 5-8 cycloalkyl, Ar or —CH 2 —Ar—CH 2 —, R 1 is C 1-6 alkyl, phenyl or benzyl, and
a crosslinking agent having at least two crosslink-forming substituents.
2. The composition for forming anti-reflective coating according to claim 1 , wherein the triazine trione oligomer compound, triazine trione polymer compound, or mixture thereof having a structure in which at least two triazine trione rings are linked through a linking group of formula (4) or (5) on the nitrogen atoms has a structure of formula (8) or (9):
wherein a weight average molecular weight of the triazine trione oligomer compound or the triazine trione polymer compound having the structure of formula (8) or (9) is 1,000 to 50,000.
3. The composition for forming anti-reflective coating according to claim 1 , wherein the triazine trione oligomer compound, triazine trione polymer compound, or mixture thereof having a structure in which at least two triazine trione rings are linked through a linking group of formula (4) on the nitrogen atoms is produced from a triazine trione compound having at least two nitrogen atoms having a substituent of formula (13) on nitrogen atom and a phenyl compound or naphthalene compound of formula (14) having at least two substituents selected from carboxy and hydroxy which are identical or different from each other.
4. The composition for forming anti-reflective coating according to claim 3 , wherein the phenyl compound or naphthalene compound of formula (14) is at least one compound selected from the group consisting of compounds of formulae (16) to (21)
wherein B is hydrogen atom, C 1-6 alkyl, phenyl, naphthyl, halogen atom, C 1-6 alkoxycarbonyl, nitro, carboxy, cyano, C 1-6 alkoxy, hydroxy, thiol, C 1-6 alkylthio or amino, n is a number of 1 to 6, m is a number of 1 to 4, and B may be identical with or different from each other in case where n or m is 2 or more.
5. The composition for forming anti-reflective coating according to claim 1 , further comprising an acid and/or an acid generator.
6. The composition for forming anti-reflective coating according to claim 1 , further comprising a resin having at least one crosslinking-forming substituent selected from hydroxy, carboxy, amino and thiol.
7. An anti-reflective coating produced by coating the composition for forming anti-reflective coating according to claim 1 on a semiconductor substrate, and baking it, wherein the anti-reflective coating has an attenuation coefficient k to a light at a wavelength of 248 nm ranging from 0.40 to 0.65.
8. An anti-reflective coating produced by coating the composition for forming anti-reflective coating according to claim 1 on a semiconductor substrate, and baking it, wherein the anti-reflective coating has an attenuation coefficient k to a light at a wavelength of 193 nm ranging from 0.20 to 0.60.
9. A method of forming an anti-reflective coating for use in a manufacture of a semiconductor device, comprising the steps of: coating the composition for forming anti-reflective coating according to claim 1 on a substrate, and baking it.
10. A method of forming an anti-reflective coating for use in a manufacture of a semiconductor device by use of a light of wavelength 248 nm or 193 nm, comprising the steps of: coating the composition for forming anti-reflective coating according to claim 1 on a substrate, and baking it.
11. A method of forming a photoresist pattern for use in a manufacture of a semiconductor device comprising the steps of:
coating the composition for forming anti-reflective coating according to claim 1 on a semiconductor substrate and baking it to form an anti-reflective coating,
forming a photoresist layer on the anti-reflective coating,
exposing the semiconductor substrate covered with the anti-reflective coating and the photoresist layer with a light, and
developing the exposed photoresist layer.
12. The method of forming a photoresist pattern according to claim 11 , wherein the exposure is carried out with a light of wavelength 248 nm or 193 nm.