Growth of reduced dislocation density non-polar gallium nitride
View Patent ↗Lateral epitaxial overgrowth (LEO) of non-polar gallium nitride (GaN) films results in significantly reduced defect density.
1. A method of performing a lateral epitaxial overgrowth of a planar and non-polar gallium nitride (GaN) film, comprising:
(a) patterning a mask deposited on a substrate; and
(b) performing a lateral epitaxial overgrowth of the planar and non-polar GaN film off the substrate, wherein the planar and non-polar GaN film nucleates only on portions of the substrate not covered by the patterned mask, the planar and non-polar GaN film grows vertically through openings in the patterned mask, and the planar and non-polar GaN film then spreads laterally above the patterned mask and across the substrate's surface resulting in a top surface that is planar and non-polar GaN.
2. The method of claim 1 , wherein the planar and non-polar GaN film is a coalesced planar and non-polar GaN film.
3. The method of claim 1 , wherein the planar and non-polar GaN film is an uncoalesced planar and non-polar GaN film.
4. A device manufactured using the method of claim 1 .
5. A lateral epitaxial overgrowth of a planar and non-polar gallium nitride (GaN) film off a substrate, wherein the lateral epitaxial overgrowth is created using a process comprising:
(a) patterning a dielectric mask deposited on a substrate; and
(b) performing a lateral epitaxial overgrowth of the planar and non-polar GaN film off the substrate, wherein the planar and non-polar GaN film nucleates only on portions of the substrate exposed by the patterned dielectric mask, the planar and non-polar GaN film grows vertically through openings in the patterned dielectric mask, and the planar and non-polar GaN film then spreads laterally above the patterned dielectric mask and across the substrate's surface resulting in a top surface that is planar and non-polar GaN.
6. The process of claim 5 , wherein the planar and non-polar GaN film is a coalesced planar and non-polar GaN film.
7. The process of claim 5 , wherein the planar and non-polar GaN film is an uncoalesced planar and non-polar GaN film.
8. A device including a lateral epitaxial overgrowth of a planar and non-polar gallium nitride (GaN) film having a top surface that is planar and non-polar GaN.
9. The device of claim 8 , wherein the device is light-emitting diode, a laser diode or a transistor.