Mask pattern for semiconductor device fabrication, method of forming the same, and method of fabricating finely patterned semiconductor device
Provided are a mask pattern including a silicon-containing self-assembled molecular layer, a method of forming the same, and a method of fabricating a semiconductor device. The mask pattern includes a resist pattern formed on a semiconductor substrate and the self-assembled molecular layer formed on the resist pattern. The self-assembled molecular layer has a silica network formed by a sol-gel reaction. To form the mask pattern, first, the resist pattern is formed with openings on an underlayer covering the substrate to expose the underlayer to a first width. Then, the self-assembled molecular layer is selectively formed only on a surface of the resist pattern to expose the underlayer to a second width smaller than the first width. The underlayer is etched by using the resist pattern and the self-assembled molecular layer as an etching mask to obtain a fine pattern.
1. A mask pattern for semiconductor device fabrication, comprising:
a resist pattern formed on a semiconductor substrate; and
a silicon-containing self-assembled molecular layer surrounding the resist pattern, wherein the self-assembled molecular layer comprises a sol-gel product of at least one oligomer selected from a cationic silicate oligomer and an anionic silicate oligomer.
2. The mask pattern of claim 1 , wherein the self-assembled molecular layer has a silica network.
3. The mask pattern of claim 2 , wherein the self-assembled molecular layer further comprises at least one polymer selected from a cationic polymer and an anionic polymer.
4. The mask pattern of claim 3 , wherein the cationic polymer is at least one compound selected from the group consisting of polyethyleneimine derivatives, polyallylamine derivatives, poly(diallyldimethylammonium chloride) derivatives, amino group-containing cellulose, cationized cellulose, poly(acrylamide), polyvinylpyridine, and poly(choline acrylate).
5. The mask pattern of claim 3 , wherein the anionic polymer is at least one compound-selected from the group consisting of poly(acrylic acid), polystyrenesulfonate, carboxyl group-containing cellulose, anionized cellulose, poly(sulfonalkyl acrylate), poly(acrylamido alkyl sulfonate), and poly(vinyl sulfate).
6. The mask pattern of claim 1 , wherein the cationic silicate oligomer is a hydrolyzed product of at least one compound selected from aminopropyltrimethoxysilane, aminopropyltriethoxysilane, and amino group-containing polyhedral oligomeric silsesquioxane.
7. The mask pattern of claim 1 , wherein the anionic silicate oligomer is one of a hydrolyzed product of at least one compound selected from silica, tetraethyl orthosilicate, and monoalkyl-trialkoxy silicon; and tetramethyl ammonium silicate (TMAH2SiO 2 ).
8. The mask pattern of claim 1 , wherein the self-assembled molecular layer is a single layer made of a sol-gel product of a cationic silicate oligomer.
9. The mask pattern of claim 1 , wherein the self-assembled molecular layer has a stacked structure of:
a first self-assembled molecular monolayer made of a sol-gel product of a cationic silicate oligomer; and
a second self-assembled molecular monolayer made of one compound selected from a sol-gel product of an anionic silicate oligomer and an anionic polymer.
10. The mask pattern of claim 9 , wherein the self-assembled molecular layer has a stacked structure is obtained by alternately and repeatedly stacking the first self-assembled molecular monolayer and the second self-assembled molecular monolayer.
11. The mask pattern of claim 1 , wherein the self-assembled molecular layer has a stacked structure of:
a first self-assembled molecular monolayer made of a compound selected from a sol-gel product of a cationic silicate oligomer and a cationic polymer; and
a second self-assembled molecular monolayer made of a sol-gel product of an anionic silicate oligomer.
12. The mask pattern of claim 11 , wherein the self-assembled molecular layer has a stacked structure is obtained by alternately and repeatedly stacking the first self-assembled molecular monolayer and the second self-assembled molecular monolayer.
13. The mask pattern of claim 1 , wherein the resist pattern is formed using one of
a material comprising a Novolak resin and a DNQ (diazonaphthoquinone)-based compound;
a chemical-amplification type resist composition comprising a photo-acid generator (PAG); a resist composition for KrF excimer laser (248 nm), ArF excimer laser (193 nm), or F 2 excimer laser (157 nm); and
a silicon-containing resist composition.
14. The mask pattern of claim 1 , wherein the resist pattern is formed on an underlayer, a portion of the underlayer is exposed through openings of the resist pattern, and
the self-assembled molecular layer is formed on a sidewall of the resist pattern defining the openings to defines an exposed area of the underlayer.
15. The mask pattern of claim 14 , wherein the underlayer is a dielectric film, a conductive film, or a semiconductive film.
16. The mask pattern of claim 14 , wherein the underlayer is formed using a resist composition.
17. The mask pattern of claim 1 , wherein the resist pattern is formed with one of
a plurality of openings to define a hole pattern; and
a plurality of lines to define a line and space pattern.