Thermoelectric material, thermoelectric conversion module and thermoelectric power generating device using the same
A thermoelectric material has a composition expressed by (Ti p Hf q Zr 1-p-q ) x Co y (Sb 1-r Sn r ) 100-x-y (0.1<p≦0.3, 0.1<q≦0.3, 0.1<r≦0.8, 30≦x≦35 atomic %, and 30≦y≦35 atomic %), and includes a phase having an MgAgAs crystal structure as a main phase.
1. A thermoelectric material comprising a composition expressed by a composition formula:
(Ti p Hf q Zr 1-p-q ) x Co y (Sb 1-r Sn r ) 100-x-y
where, p is a value satisfying 0.2≦p≦0.3, q is a value satisfying 0.2≦q≦0.3, r is a value satisfying 0.1<r≦0.8, x is a value satisfying 30≦x≦35 atomic %, and y is a value satisfying 30≦y≦35 atomic %,
wherein the thermoelectric material includes a phase having an MgAgAs crystal structure as a main phase, and has a Seebeck coefficient α at 700K of 290 μV/K or more and an electric resistivity ρ at 700K of 2.8 mΩcm or less.
2. The material according to claim 1 , wherein the value r satisfies 0.1<r≦0.5.
3. The material according to claim 1 , wherein the value r satisfies 0.1<r≦0.3.
4. The material according to claim 1 , wherein a part of a total amount of the Ti (titanium), Zr (zirconium) and Hf (hafnium) is replaced by at least one element selected from V (vanadium), Nb (niobium), Ta (tantalum), Cr (chromium), Mo (molybdenum), W (tungsten), Sc (scandium), Y (yttrium), U (uranium) and a lanthanoid element.
5. The material according to claim 1 , wherein a part of the Co (cobalt) is replaced by at least one element selected from Mn (manganese), Fe (iron), Ni (nickel), Cu (copper), Ag (silver), Pd (palladium), Pt (platinum), Ru (ruthenium) and Os (osmium).
6. The material according to claim 1 , wherein a part of a total amount of the Sb (antimony) and Sn (tin) is replaced by at least one selected from Bi (bismuth), Pb (lead), Se (selenium), Te (tellurium) and Ge (germanium).
7. The material according to claim 1 , wherein a part of a total amount of the Sb (antimony) and Sn (tin) is replaced by at least one selected from Bi (bismuth) and Ge (germanium).
8. The material according to claim 1 , wherein the thermoelectric material is a p-type thermoelectric material.
9. The material according to claim 1 , wherein a power factor P at 700K of the thermoelectric material is 3.6 mW/mK 2 or more, where the power factor P is obtained from the Seebeck coefficient α at 700K and the electric resistivity ρ at 700K by a formula α 2 /ρ.
10. A thermoelectric conversion module, comprising:
a first electrode;
a p-type thermoelectric element with one end connected to the first electrode;
a second electrode connected to the other end of the p-type thermoelectric element;
an n-type thermoelectric element with one end connected to the second electrode; and
a third electrode connected to the other end of the n-type thermoelectric element, wherein
at least one of the p-type thermoelectric element and the n-type thermoelectric element is composed of a thermoelectric material comprising a composition expressed by a composition formula:
(Ti p Hf q Zr 1-p-q ) x Co y (Sb 1-r Sn r ) 100-x-y
where, p is a value satisfying 0.2≦p≦0.3, q is a value satisfying 0.2≦q≦0.3, r is a value satisfying 0.1<r≦0.8, x is a value satisfying 30≦x≦35 atomic %, and y is a value satisfying 30≦y≦35 atomic %, and wherein
the thermoelectric material includes a phase having an MgAgAs crystal structure as a main phase, and has a Seebeck coefficient α at 700K of 290 μV/K or more and an electric resistivity ρ at 700K of 2.8 mΩcm or less.
11. The module according to claim 10 , wherein the value r satisfies 0.1<r≦0.5.
12. The module according to claim 10 , wherein a part of a total amount of the Ti (titanium), Zr (zirconium) and Hf (hafnium) is replaced by at least one element selected from V (vanadium), Nb (niobium), Ta (tantalum), Cr (chromium), Mo (molybdenum), W (tungsten), Sc (scandium), Y (yttrium), U (uranium) and a lanthanoid element.
13. The module according to claim 10 , wherein a part of the Co (cobalt) is replaced by at least one element selected from Mn (manganese), Fe (iron), Ni (nickel), Cu (copper), Ag (silver), Pd (palladium), Pt (platinum), Ru (ruthenium) and Os (osmium).
14. The module according to claim 10 , wherein a part of a total amount of the Sb (antimony) and Sn (tin) is replaced by at least one element selected from Bi (bismuth), Pb (lead), Se (selenium), Te (tellurium) and Ge (germanium).
15. The module according to claim 10 , wherein the p-type thermoelectric element is composed of the thermoelectric material.
16. The module according to claim 10 , wherein the p-type thermoelectric element comprises a plurality of p-type thermoelectric elements and the n-type thermoelectric element comprises a plurality of n-type thermoelectric elements, and the plurality of p-type thermoelectric elements and the plurality of n-type thermoelectric elements are alternately disposed and connected in series with the first, second and third electrodes.
17. The module according to claim 10 , wherein a power factor P at 700K of the thermoelectric material is 3.6 mW/mK 2 or more, where the power factor P is obtained from the Seebeck coefficient α at 700K and the electric resistivity ρ at 700K by a formula α 2 /ρ.
18. A thermoelectric power generating device, comprising:
a high-temperature portion;
a low-temperature portion; and
the thermoelectric conversion module according to claim 10 and disposed between the high-temperature portion and the low-temperature portion, wherein
heat of the high-temperature portion is converted into electric power by the thermoelectric conversion module.
19. The device according to claim 18 , wherein the high-temperature portion includes a flow path for a high-temperature fluid, and the low-temperature portion includes a flow path for a cooling medium.