Electric power conversion device
An object of the present invention is to provide an electric power converter including means for accurately detecting a principal current of IGBT. An electric power conversion device according to the present invention includes principal current estimation means for estimating a principal current by using: an output of temperature measuring means whose diode is disposed in the same semiconductor substrate as an IGBT including an emitter having flowing therethrough the principal current and a sense emitter having flowing therethrough a sense current proportional to the principal current; the sense current; and the information, preliminarily stored in memory means, on the relationship among the semiconductor substrate temperature, the principal current and the sense currant.
1. An electric power conversion device comprising:
at least one IGBT,
the IGBT including on the same semiconductor substrate thereof a first emitter having flowing therethrough a principal current, a second, sense emitter having a same cross-sectional structure as the first emitter and a smaller gate width than the first emitter, and means for measuring temperature;
means for driving the IGBT; and
principal current estimation means for receiving an output of the temperature measuring means and a sense current flowing through the sense emitter, and thereby estimating the principal current,
wherein the principal current estimation means includes:
current-voltage conversion means for converting the sense current to a voltage;
first ND conversion means for converting a voltage outputted by the current-voltage conversion means from analog to digital form;
memory means for storing a relationship among a semiconductor substrate temperature of the IGBT, the principal current and the sense current; and
calculation means for receiving the relationship information, stored in the memory means, among the semiconductor substrate temperature, the principal current and the sense current, the information on sense current converted by the first A/D conversion means, and the information on temperature of the IGBT, and thereby calculating the principal current, and
wherein motor vector control is performed based on the principal current calculated by the calculation means based on the information on the temperature.
2. The electric power conversion device according to claim 1 , wherein the temperature measuring means is a diode disposed on one principal surface of the semiconductor substrate via an insulating layer.
3. The electric power conversion device according to claim 1 , wherein an output of the current-voltage conversion means of the principal current estimation means is supplied to the first A/D conversion means via filter means.
4. The electric power conversion device according to claim 1 , wherein the principal current estimation means includes second A/D conversion means for converting a voltage outputted by the temperature measuring means from analog to digital form.
5. An electric power conversion device comprising:
at least one IGBT,
the IGBT including on one principal surface of a semiconductor substrate thereof a collector electrode, and on another surface of the semiconductor substrate a first emitter having flowing therethrough a principal current, a second, sense emitter having a same cross-sectional structure as the first emitter and a smaller gate width than the first emitter, and means for measuring temperature,
the temperature measuring means is a diode disposed via an insulating layer on said another principal surface of the semiconductor substrate;
means for driving the IGBT; and
principal current estimation means for receiving an output of the temperature measuring means and a current flowing through the sense emitter, and thereby estimating the principal current,
wherein the principal current estimation means includes:
current-voltage conversion means for converting the sense current to a voltage;
first A/D conversion means for converting a voltage outputted by the current-voltage conversion means from analog to digital form;
memory means for storing a relationship among a semiconductor substrate temperature of the IGBT, the principal current and the sense current; and
calculation means for receiving the relationship information, stored in the memory means, among the semiconductor substrate temperature, the principal current and the sense current, the information on sense current converted by the first A/D conversion means, and the information on temperature of the IGBT, and thereby calculating the principal current, and
wherein motor vector control is performed based on the principal current calculated by the calculation means based on the information on the temperature.