IP Library › Granted Patent US 7,851,997
Granted Patent B2
US 7,851,997 · App. 11/754,495 · Granted Dec 14, 2010

Light emitting element and light emitting device

Assignee: Semiconductor Energy Laboratory Co., Ltd.
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Quick Facts
Patent No.
US 7,851,997
App. No.
11/754,495
Granted
Dec 14, 2010
Kind
B2
Abstract

It is an object of the present invention to provide a high-performance and highly reliable light emitting element which has high light emission luminance and luminous efficiency and good adhesiveness inside the element. A feature of the present invention is that the refractive index, internal stress, and dielectric constant are made to change continuously in an insulating layer included in a light emitting element. Since properties of the film are changed continuously in a single layer, this insulating layer has gradations of property values of the film (refractive index, internal stress, dielectric constant, and the like) in the film, and has no interface which is generated in a case of a stacked structure.

Claims (39)

1. A light emitting element comprising:

a first electrode layer;

a first insulating layer comprising silicon, oxygen and nitrogen, over the first electrode layer;

an electroluminescent layer comprising an inorganic compound in contact with the first insulating layer;

a second insulating layer comprising silicon, oxygen and nitrogen over the electroluminescent layer; and

a second electrode layer over the second insulating layer,

wherein a concentration of oxygen contained in the first insulating layer decreases from the first electrode layer side toward the electroluminescent layer side, and a concentration of nitrogen contained in the first insulating layer increases from the first electrode layer side toward the electroluminescent layer side, and

wherein a concentration of oxygen contained in the second insulating layer decreases from the second electrode layer side toward the electroluminescent layer side, and a concentration of nitrogen contained in the second insulating layer increases from the second electrode layer side toward the electroluminescent layer side.

2. A light emitting element according to claim 1 , wherein the first insulating layer is in contact with the first electrode layer.

3. A light emitting element according to claim 1 , wherein a refractive index of the first insulating layer increases from the first electrode layer side toward the electroluminescent layer side.

4. A light emitting element according to claim 1 , wherein a dielectric constant of the first insulating layer increases from the first electrode layer side toward the electroluminescent layer side.

5. A light emitting element according to claim 1 , wherein an internal stress of the first insulating layer increases from the first electrode layer side toward the electroluminescent layer side.

6. A light emitting element according to claim 1 ,

wherein the second insulating layer is in contact with the second electrode layer and the electroluminescent layer.

7. A light emitting element according to claim 1 ,

wherein a refractive index of the second insulating layer increases from the second electrode layer side toward the electroluminescent layer side.

8. A light emitting element according to claim 1 ,

wherein a dielectric constant of the second insulating layer increases from the second electrode layer side toward the electroluminescent layer side.

9. A light emitting element according to claim 1 ,

wherein an internal stress of the second insulating layer increases from the second electrode layer side toward the electroluminescent layer side.

10. A light emitting element according to claim 1 , wherein the first insulating layer is a single layer.

11. A light emitting element comprising:

a first electrode layer;

a first insulating layer over the first electrode layer;

an electroluminescent layer comprising an inorganic compound in contact with the first insulating layer;

a second insulating layer over the electroluminescent layer; and

a second electrode layer over the second insulating layer,

wherein a refractive index of the first insulating layer increases from the first electrode layer side toward the electroluminescent layer side, and

wherein a refractive index of the second insulating layer increases from the second electrode layer side toward the electroluminescent layer side.

12. A light emitting element according to claim 11 , wherein the first insulating layer is in contact with the first electrode layer.

13. A light emitting element according to claim 11 , wherein a dielectric constant of the first insulating layer increases from the first electrode layer side toward the electroluminescent layer side.

14. A light emitting element according to claim 11 , wherein an internal stress of the first insulating layer increases from the first electrode layer side toward the electroluminescent layer side.

15. A light emitting element according to claim 11 ,

wherein the second insulating layer is in contact with the second electrode layer and the electroluminescent layer.

16. A light emitting element according to claim 11 ,

wherein a dielectric constant of the second insulating layer increases from the second electrode layer side toward the electroluminescent layer side.

17. A light emitting element according to claim 11 ,

wherein an internal stress of the second insulating layer increases from the second electrode layer side toward the electroluminescent layer side.

18. A light emitting element according to claim 11 , wherein the first insulating layer is a single layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 30, 2007
From: ITO, SHUNICHI; IKEDA, HISAO
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 019352/0739 →
Priority Claims (1)
JP 2006-155387 · Jun 2, 2006 · national
Continuity (1)
Related Publication 20070278946A1 · Dec 6, 2007