Method for forming metal line in semiconductor device
A method for forming a metal line in a semiconductor device may include forming a silicon (Si) monolayer as an etching prevention layer over an exposed portion of a lower metal layer and sidewalls of an upper metal layer, middle metal layer, and the entire surface of curved photoresist patterns.
1. A method for forming a metal line in a semiconductor device comprising:
sequentially forming a dielectric layer, a lower layer, a metal layer and an upper layer sequentially over a semiconductor substrate; and then
forming a photoresist pattern partially exposing the upper layer a predetermined lateral spatial interval; and then
etching the upper layer and the metal layer using the photoresist pattern as a mask to partially expose the lower layer by the predetermined lateral spatial interval; and then
forming a metal etching prevention layer over the exposed lower layer, the etched upper layer, the etched metal layer and the photoresist pattern; and then
etching the lower layer using the photoresist pattern and the metal etching prevention layer as masks to partially expose the dielectric layer by the predetermined lateral spatial interval.
2. The method of claim 1 , further comprising, after partially exposing the dielectric layer, removing the photoresist pattern and the metal etching prevention layer.
3. The method of claim 2 , wherein the photoresist pattern and the metal etching prevention layer are removed by O 2 plasma and wet-etching.
4. The method of claim 1 , wherein the lower layer and the upper layer comprise one of Ti, TiN and compounds thereof and the metal layer comprises Al.
5. The method of claim 4 , wherein the upper layer and the metal layer are etched by a C x F y based etching gas.
6. The method of claim 4 , wherein the metal etching prevention layer is formed by injecting silane gas over the exposed lower layer, the etched upper layer, the etched metal layer and the whole surface of the photoresist pattern.
7. The method of claim 6 , wherein the metal etching prevention layer is formed at a temperature in a range between approximately 100 to 200° C., and the injected silane quantity is in a range between approximately 100 to 2000 sccm.
8. The method of claim 4 , wherein the lower layer is etched by a C x F y based etching gas.
9. The method of claim 8 , wherein a bias application voltage of the C x F y based etching gas is in a range between approximately 10 to 1000 W.
10. The method of claim 1 , wherein the lower layer, the metal layer and the upper layer are deposited by physical vapor deposition (PVD).
11. The method of claim 10 , wherein the lower layer and the upper layer are formed at a temperature in a range between approximately 25° C. to 350° C. and the metal layer is formed in a temperature in a range between approximately 25° C. to 450° C.
12. The method of claim 1 , wherein etching the upper layer and the metal layer comprises etching the photoresist pattern such that an upper part thereof is curved.
13. A method comprising:
sequentially forming a dielectric layer, a lower metal layer, a middle metal layer and an upper metal layer over a semiconductor substrate; and then
exposing a portion of the upper metal layer by forming photoresist patterns spaced apart a predetermined distance on the upper metal layer; and then
exposing a portion of the lower metal layer by simultaneously etching the upper metal layer, the middle metal layer using an etching gas and also partially etching the photoresist patterns; and then
simultaneously forming a silicon (Si) monolayer as a etching prevention layer over the exposed portion of the lower metal layer and sidewalls of the upper metal layer, the middle metal layer, and the entire surface of the photoresist patterns and also removing a component of the etching gas; and then
forming metal lines over the semiconductor substrate by etching the exposed portion of the lower metal layer to expose a portion of the dielectric layer.
14. The method of claim 13 , wherein the lower metal layer and the upper metal layer are composed of one of titanium (Ti), titanium nitride (TiN) and compounds thereof.
15. The method of claim 14 , wherein the middle metal layer is composed of aluminum (Al).
16. The method of claim 13 , wherein exposing the portion of the lower metal layer is performed using reactive ion etching (RIE).
17. The method of claim 13 , wherein the etching gas comprises a C x F y based etching gas.
18. The method of claim 13 , wherein forming the silicon (Si) monolayer comprises:
contacting the exposed portion of the lower metal layer and sidewalls of the upper metal layer, the middle metal layer, and the entire surface of the photoresist patterns with silane (SiH 4 ) gas at a temperature in a range between approximately 100 to 200° C. and using a dosage of silane (SiH 4 ) in a range between approximately 100 to 2000 sccm.
19. The method of claim 13 , further comprising, after forming the metal lines, removing the photoresist pattern and the metal etching prevention layer.
20. The method of claim 13 , wherein the lower layer is etched using a C x F y based etching gas at a bias application voltage in a range between approximately 10 to 1000 W.