Photo-mask having phase and non-phase shifter parts for patterning an insulated gate transistor
A photo-mask that includes a first light shielding region which is narrow and elongated, and a second light shielding region which is wider and more elongated than the first light shielding region and is away from the first light shielding region. A phase shifter part and a non-phase shifter part are provided adjacently to both sides of the first light shielding region. Two phase shifter parts or two non-phase shifter parts are respectively provided adjacently to both sides of the second light shielding part.
1. A photo-mask comprising:
a first light shielding region being narrow and elongated, the first light shielding region corresponding to a first circuit pattern and being for use in manufacturing the first circuit pattern;
a second light shielding region being elongated and wider than the first light shielding region and being distant from the first light shielding region, the second light shielding region corresponding to or wider than a second circuit pattern and being for use in manufacturing the second circuit pattern;
a first light transmitting region being arranged on a first side of the first light shielding region and being provided with a-first one of a first phase shifter part and a first non-phase shifter part, the first phase shifter part shifting the phase of a transmitted light by zero degrees and the first non-phase shifter part shifting the phase of the transmitted light by 180 degrees;
a second light transmitting region being arranged between a second side of the first light shielding region and a first side of the second light shielding region, the second light transmitting region being provided with the other one of the first phase shifter part and the first non-phase shifter part; and
a third light transmitting region being arranged on a second side of the second light shielding region and being provided with one of a second phase shifter part and a second non-phase shifter part which shifts the phase of the transmitted light by the same degree as that of the other one of the first phase shifter part and the first non-phase shifter part, the second phase shifter part shifting the phase of a transmitted light by zero degrees and the second non-phase shifter part shifting the phase of the transmitted light by 180 degrees.
2. The photo-mask according to claim 1 , wherein the first and the second phase shifter parts and the first and the second non-phase shifter parts have a substantially same width.
3. The photo-mask according to claim 1 , wherein the first and second light shielding regions constitute a pattern of a gate electrode of an insulated gate transistor except for a gate contact portion.
4. The photo-mask according to claim 1 , further comprising:
a third light shielding region with a width substantially equal to that of the first light shielding region; and
a fourth light transmitting region being provided with the other of the second phase shifter part and the second non-phase shifter part,
wherein the third light shielding region is sandwiched between the third light transmitting region and the fourth light transmitting region.