Diamond LED devices and associated methods
View Patent ↗LED devices incorporating diamond materials and methods for making such devices are provided. One such method may include forming epitaxially a substantially single crystal SiC layer on a substantially single crystal Si wafer, forming epitaxially a substantially single crystal diamond layer on the SiC layer, doping the diamond layer to form a conductive diamond layer, removing the Si wafer to expose the SiC layer opposite to the conductive diamond layer, forming epitaxially a plurality of semiconductor layers on the SiC layer such that at least one of the semiconductive layers contacts the SiC layer, and coupling an n-type electrode to at least one of the semiconductor layers such that the plurality of semiconductor layers is functionally located between the conductive diamond layer and the n-type electrode.
1. A method of making an LED device, comprising:
forming epitaxially a substantially single crystal SiC layer on a substantially single crystal Si wafer;
forming epitaxially a substantially single crystal diamond layer on the SiC layer;
doping the diamond layer to form a conductive diamond layer;
removing the Si wafer to expose the SiC layer opposite to the diamond layer;
forming epitaxially a plurality of semiconductor layers on the SiC layer such that at least one of the semiconductive layers contacts the SiC layer; and
coupling an n-type electrode to at least one of the semiconductor layers, such that the plurality of semiconductor layers is functionally located between the conductive diamond layer and the n-type electrode, and where the conductive diamond layer and the n-type electrode are arranged such that there is a substantially linear conductive pathway therebetween.
2. The method of claim 1 , wherein forming an epitaxial layer of a substantially single crystal diamond layer further includes compositionally grading a surface of the Si wafer from Si to SiC to form the SiC layer, and compositionally grading a surface of the SiC layer to diamond to form the diamond layer.
3. The method of claim 2 , wherein forming an epitaxial layer of single crystal SiC further includes:
forming a conformal amorphous diamond layer on the Si growth substrate to form the SiC layer in situ therebetween; and
removing the conformal amorphous diamond layer to expose the SiC layer.
4. The method of claim 3 , further comprising forming the conductive diamond layer on the exposed SiC layer.
5. The method of claim 1 , further comprising:
forming a Si layer on the diamond layer on a surface opposite the SiC layer prior to removing the Si wafer; and
bonding a Si carrier substrate having a SiO 2 layer to the Si layer, such that the Si layer is bonded to the SiO 2 layer.
6. The method of claim 1 , wherein the plurality of semiconductor layers is arranged in series between the conductive diamond layer and the n-type electrode.
7. The method of claim 1 , further comprising coupling a light reflective layer to the conductive diamond layer on a surface that is opposite the SiC layer.
8. The method of claim 1 , wherein doping the diamond layer includes doping the diamond layer with boron.
9. The method of claim 1 , wherein the plurality of semiconductor layers includes at least one member selected from the group consisting of gallium nitride, boron nitride, aluminum nitride, indium nitride, and combinations thereof.
10. The method of claim 9 , wherein at least one of the semiconductor layers includes gallium nitride.
11. The method of claim 9 , wherein at least one of the semiconductor layers includes aluminum nitride.
12. The method of claim 1 , wherein the SiC layer is less than or equal to about 1 micron thick.
13. The method of claim 1 , wherein the SiC layer is less than or equal to about 500 nanometers thick.
14. The method of claim 1 , wherein the SiC layer is less than or equal to about 1 nanometer thick.
15. The method of claim 11 , wherein the conductive diamond substrate is substantially transparent to light.