Polishing pad
It is an object of the invention to provide a polishing pad capable of high precision optical detection of an endpoint during polishing in progress and prevention of slurry leakage from between a polishing region and a light-transmitting region during the use thereof even after the polishing pad has been used for a long period. It is a second object of the invention to provide a polishing pad capable of suppression of deterioration of polishing characteristics (such as in-plane uniformity) and generation of scratches due to a difference in behavior of a polishing region and a light-transmitting region during polishing. It is a third object of the invention to provide a polishing pad having a polishing region and a light-transmitting region with a concentration of a specific metal equal to or lower than a specific value (threshold value).
1. A polishing pad having a polishing region and a light-transmitting region, wherein a water permeation preventive layer is provided on one surface of the polishing region and the light-transmitting region, and the light-transmitting region and the water permeation preventive layer are made of the same material integrally in a single piece,
wherein each of the polishing region and the light-transmitting region comprise a polymer made from raw materials on equipment that comprises surfaces contacting said raw materials, wherein said surfaces comprise no metal other than chrome such that each of said regions have a concentration of Fe of 0.3 ppm or less, a concentration of Ni of 1.0 ppm or less, a concentration of copper of 0.5 ppm or less, a concentration of zinc of 0.1 ppm or less and a concentration of Al of 1.2 ppm or less.
2. The polishing pad according to claim 1 , wherein no interface exists between the light-transmitting region and the water permeation preventive layer.
3. The polishing pad according to claim 1 , wherein the water permeation preventive layer has a cushioning property.
4. The polishing pad according to claim 1 , wherein a material of which the light-transmitting region and the water permeation preventive layer are made is a non-foam.
5. The polishing pad according to claim 1 , wherein a material of which the polishing region is made is a fine foam.
6. The polishing pad according to claim 1 , wherein the light-transmitting region has no depression and protrusion structure for holding or renewing a polishing liquid on a polishing side surface thereof.
7. The polishing pad according to claim 1 , wherein the polishing region has a depression and protrusion structure for holding or renewing a polishing liquid on a polishing side surface thereof.
8. A method for manufacturing the polishing pad according to claim 1 , comprising: a step of forming an aperture for providing the light-transmitting region in the polishing region; a step of casting a material into a mold having shapes of the light-transmitting region and the water permeation preventive layer and curing the material to thereby form a transparent member into which the light-transmitting region and the water permeation preventive layer are made integrally as a single piece; and a step of fittingly inserting the light-transmitting region into the aperture in the polishing region to thereby laminate the polishing region and the transparent member.
9. A method for manufacturing the polishing pad according to claim 1 , comprising: a step of forming an aperture for providing the light-transmitting region in the polishing region; and a step of casting a material into a space section having shapes of the aperture and the water permeation preventive layer and curing the material to thereby form a transparent member into which the light-transmitting region and the water permeation preventive layer are made integrally as a single piece.
10. A method for manufacturing a semiconductor device comprising steps of polishing a surface of a semiconductor wafer using a polishing pad according to claim 1 .
11. A polishing pad having a polishing region and a light-transmitting region according to claim 1 , wherein a compressibility of the light-transmitting region is more than a compressibility of the polishing region.
12. The polishing pad according to claim 11 , wherein a compressibility of the light-transmitting region is in the range of from 1.5 to 10%.
13. The polishing pad according to claim 11 , wherein a compressibility of the polishing region is in the range of from 0.5 to 5%.
14. The polishing pad according to claim 11 , wherein the light-transmitting region has a light transmittance of 80% or more at a wavelength in all the region of from 500 to 700 nm in wavelength.
15. A method for manufacturing a semiconductor device comprising steps of polishing a surface of a semiconductor wafer using a polishing pad according to claim 11 .
16. A polishing pad, in which a polishing layer having a polishing region and an aperture A for providing a light-transmitting region therein and a cushion layer having an aperture B smaller than the light-transmitting region are laminated one on the other so that the apertures A and B are superimposed one on the other, the light-transmitting region is provided on the aperture B and in the aperture A and a water non-permeable elastic member having a hardness lower than the polishing region and the light-transmitting region is provided in an annular groove existing between the aperture A and the light-transmitting region,
wherein the water non-permeable elastic member is made of a water non-permeable resin composition containing a water non-permeable resin of at least one kind selected from the group consisting of a rubber, a thermoplastic elastomer and a reaction curable resin, and
wherein the water non-permeable elastic member is lower in height than the annular groove.
17. The polishing pad according to claim 16 , wherein the water non-permeable elastic member has an Asker hardness A of 80 degrees or less.
18. A method for manufacturing the polishing pad according to claim 16 , comprising: a step of laminating a cushion layer on a polishing layer having a polishing region and an aperture A for providing the light-transmitting region; a step of removing part of the cushion layer in the aperture A to form an aperture B smaller than the light-transmitting region in the cushion layer; a step of providing the light-transmitting region on the aperture B and in the aperture A; and a step of casting a water non-permeable resin composition into an annular groove existing between the aperture A and the light-transmitting region and curing the composition to thereby form a water non-permeable elastic member.
19. A method for manufacturing the polishing pad according to claim 16 , comprising: a step of laminating a polishing layer having a polishing region and an aperture A for providing the light-transmitting region and a cushion layer having an aperture B smaller than the light-transmitting region one on the other so that the apertures A and B are superimposed one on the other; a step of providing the light-transmitting region on the aperture B and in the aperture A; and a step of casting a water non-permeable resin composition into an annular groove existing between the aperture A and the light-transmitting region and curing the composition to thereby form a water non-permeable elastic member.
20. A method for manufacturing a semiconductor device comprising steps of polishing a surface of a semiconductor wafer using a polishing pad according to claim 16 .
21. A polishing pad in which a polishing layer having a polishing region and a light-transmitting region and a cushion layer having an aperture B smaller than the light-transmitting region are laminated one on the other so that the light-transmitting region and the aperture B are superimposed one on the other and an annular water non-permeable elastic member is provided over a contact portion between the rear surface of the light-transmitting region and a section of the aperture B so as to cover the contact portion,
wherein the water non-permeable elastic member is made of a water non-permeable resin composition containing a water non-permeable resin of at least one kind selected from the group consisting of a rubber, a thermoplastic elastomer and a reaction curable resin.
22. The polishing pad according to claim 21 , wherein the water non-permeable elastic member has an Asker hardness A of 80 degrees or less.
23. A method for manufacturing the polishing pad according to claim 21 , comprising: a step of laminating a polishing layer having a polishing region and a light-transmitting region and a cushion layer having an aperture B smaller than the light-transmitting region one on the other so that the light-transmitting region and the aperture B are superimposed one on the other; and a step of coating a water non-permeable resin composition over a contact portion between the rear surface of the light-transmitting region and a section of the aperture B to cure the wet coat and to thereby form an annular water non-permeable elastic member so as to cover the contact portion.
24. A method for manufacturing the polishing pad according to claim 21 , comprising: a step of laminating a cushion layer on a polishing layer having a polishing region and an aperture A for providing the light-transmitting region so as to be inserted therein; a step of removing part of the cushion layer in the aperture A to form an aperture B smaller than the light-transmitting region in the cushion layer; a step of providing the light-transmitting region on the aperture B and in the aperture A; and a step of coating a water non-permeable resin composition over a contact portion between the rear surface of the light-transmitting region and a section of the aperture B to cure the wet coat and to thereby form an annular water non-permeable elastic member so as to cover the contact portion.
25. A method for manufacturing the polishing pad according to claim 21 , comprising: a step of laminating a polishing layer having a polishing region and an aperture A for providing the light-transmitting region so as to be inserted therein and a cushion layer having the aperture B smaller than the light-transmitting region one on the other so that the apertures A and B are superimposed one on the other; a step of providing the light-transmitting region on the aperture B and in the aperture A; and a step of coating a water non-permeable resin composition over a contact portion between the rear surface of the light-transmitting region and a section of the aperture B to cure the wet coat and to thereby form an annular water non-permeable elastic member so as to cover the contact portion.
26. A method for manufacturing a semiconductor device comprising steps of polishing a surface of a semiconductor wafer using a polishing pad according to claim 21 .
27. A polishing pad having a polishing region and a light-transmitting region, wherein each of the polishing region and the light-transmitting region comprise a polymer made from raw materials on equipment that comprises surfaces contacting said raw materials, wherein said surfaces comprise no metal other than chrome such that each of said regions have a concentration of Fe of 0.3 ppm or less, a concentration of Ni of 1.0 ppm or less, a concentration of copper of 0.5 ppm or less, a concentration of zinc of 0.1 ppm or less and a concentration of Al of 1.2 ppm or less.
28. The polishing pad according to claim 27 , wherein a material of the polishing region and the light-transmitting region is a polymer of at least one kind selected from the group consisting of a polyolefin resin, a polyurethane resin, a (meth)acrylic resin, a silicone resin, a fluororesin, a polyester resin, a polyamide resin, a polyamideimide resin and a photosensitive resin.
29. A method for manufacturing a semiconductor device comprising steps of polishing a surface of a semiconductor wafer using a polishing pad according to claim 27 .