Method of manufacturing semiconductor device

1. A method of manufacturing a semiconductor device, the semiconductor device comprising a semiconductor substrate and a layer to be etched formed on the semiconductor substrate, wherein a groove and a concave portion are formed in the layer to be etched, and the concave portion is formed at a bottom of the groove and has a smaller opening portion than an opening portion of the groove, the method comprising:

sequentially forming a first hard mask layer and a second hard mask layer on the layer to be etched;

a first groove-forming mask pattern forming process which forms a groove-forming mask pattern which has a first pitch, is formed of the second hard mask layer, and is used as an etching mask when forming groove patterns, by

forming a first resist layer on the second hard mask layer in order to form a first resist pattern that has a second pitch and is formed of the first resist layer, and

etching the second hard mask layer using the first resist pattern as an etching mask; and

a first concave portion-forming mask pattern forming process which forms a concave portion-forming mask pattern which has a third pitch substantially identical to the first pitch, is formed of the first hard mask layer, and is used as an etching mask when forming concave portion patterns, by

sequentially forming a first organic layer and a second resist layer on the first hard mask layer, on which the groove-forming mask pattern is formed, in order to form a second resist pattern comprising the second resist layer having an opening portion that has a fourth pitch and the first organic layer having an opening portion that is connected to an opening portion of the second resist layer and has a smaller size than the opening portion of the second resist layer, and

etching the first hard mask layer using the second resist pattern as an etching mask.

2. The method of claim 1 , wherein the fourth pitch is larger than the third pitch, and

after the first concave portion-forming mask pattern forming process, the method further comprising a second concave portion-forming mask pattern forming process which comprises:

sequentially forming a second organic layer and a third resist layer in order to form a third resist pattern comprising the third resist layer having an opening portion that has the fourth pitch and the second organic layer that has an opening portion that is connected to an opening portion of the third resist layer and has a smaller size than the opening portion of the third resist layer, and

etching the first hard mask layer using the third resist pattern as an etching mask.

3. The method of claim 1 , wherein the second pitch is larger than the first pitch, and

after the first groove-forming mask pattern forming process, the method further comprising a second groove-forming mask pattern forming process which comprises:

forming a fourth resist layer in order to form a fourth resist pattern which has the second pitch and is formed of the fourth resist layer, and

etching the second hard mask layer by using the fourth resist pattern as an etching mask.

4. The method of claim 1 , further comprising:

groove and concave portion forming process for forming a groove and a concave portion, by etching the layer to be etched by using the concave portion-forming mask pattern formed of the first hard mask layer as an etching mask, and etching the first hard mask layer and the layer to be etched by using the groove-forming mask pattern formed of the second hard mask layer as an etching mask.

5. The method of claim 1 , wherein the semiconductor device further comprises:

a first wiring that is formed on the semiconductor substrate and under the layer to be etched;

a second wiring formed in the groove; and

an electrode that is formed in the concave portion and connects the first wiring and the second wiring.

6. The method of claim 1 , wherein an opening portion of the first organic layer has a tapered sidewall surface.

7. The method of claim 2 , wherein an opening portion of the second organic layer has a tapered sidewall surface.

8. The method of claim 6 , wherein the sidewall surface of the opening portion of the first organic layer is formed by attaching a reactant product of an etching gas to the sidewall surface of the opening portion of the first organic layer and etching the sidewall surface.

9. The method of claim 7 , wherein the sidewall surface of the opening portion of the second organic layer is formed by attaching a reactant product of an etching gas to the sidewall surface of the opening portion of the second organic layer and etching the sidewall surface.

10. The method of claim 8 , wherein the etching gas comprises one of CF 4 and CHF 3 .

11. The method of claim 9 , wherein the etching gas comprises one of CF 4 and CHF 3 .