Semiconductor substrate treating method, semiconductor component and electronic appliance

1. A semiconductor substrate treating method, comprising the step of treating a semiconductor substrate with a treating fluid consisting essentially of deionized water, NH 4 OH and HF wherein the relationships 0.30≦X/Y≦0.78 and 0.03≦Y≦6.0 are satisfied, where X represents a concentration [mol/L] of NH 4 OH in the treating fluid and Y represents a concentration [mol/L] of HF in the treating fluid,

and

wherein the treating fluid is used to remove an oxide film formed by a gas phase method and subsisting on the semiconductor substrate and remove an etching reaction product or a modified substance of the reaction product subsisting on the semiconductor substrate.

2. The method as recited in claim 1 , wherein the relationships 0.30≦X/Y≦0.43 and 0.03≦Y≦6.0 are satisfied, where X represents a concentration [mol/L] of NH 4 OH in the treating fluid and Y represents a concentration [mol/L] of HF in the treating fluid.

3. The method as recited in claim 1 , wherein the relationships 0.43≦X/Y≦0.78 and 0.03≦Y≦6.0 are satisfied, where X represents a concentration [mol/L] of NH 4 OH in the treating fluid and Y represents a concentration [mol/L] of HF in the treating fluid.

4. The method as recited in claim 1 , wherein the treating fluid is prepared by admixing at least a first liquid containing NH 4 OH and a second liquid containing HF within an apparatus for treating the semiconductor substrate.

5. The method as recited in claim 1 , wherein the treating fluid is prepared by admixing at least a first liquid containing NH 4 OH, a second liquid containing HF and the deionized water within an apparatus for treating the semiconductor substrate.

6. The method as recited in claim 1 , wherein the treating fluid is substantially free from H 2 O 2 .

7. The method as recited in claim 1 , wherein a pH of the treating fluid is higher than a pH of HF.

8. The method as recited in claim 1 , wherein the etching reaction product or the modified substance of the reaction product is a residue created by CF-based gas dry etching, a fluorocarbon-based substance, an oxide of the fluorocarbon-based substance and a compound having a partial structure of Si—C—F—O.

9. A semiconductor substrate treating method, comprising:

producing a semiconductor substrate; preparing a treating fluid by admixing a first liquid containing NH4OH and a second liquid containing HF, and water within an apparatus for treating the semiconductor substrate; and

treating the semiconductor substrate with the treating fluid consisting essentially of deionized water, NH4OH and HF wherein the relationships 0.30≦Y≦78 and 0.03≦Y≦6.0 are satisfied so that a pH of the treating fluid is higher than a pH of HF, where X represents a concentration [mol/L] of NH4OH in the treating fluid and Y represents a concentration [mol/L] of HF in the treating fluid,

wherein the producing the semiconductor substrate comprises:

preparing a substrate;

forming a thermal oxide film on the substrate;

forming an oxide film on the thermal oxide film by a gas phase method;

forming a Si3N4 film or a poly-Si film on the oxide film, the Si3N4 film and the poly-Si film each having a surface;

providing a resist mask on a part of the surface of the Si3N4 film or the poly-Si film;

etching the Si3N4 film or the poly-Si film on which no resist mask is provided, thereby generating an etching reaction product or a modified substance of the etching reaction product on the oxide film; and

removing the resist mask to obtain the semiconductor substrate; and

wherein the treating fluid is used to remove the oxide film and remove the etching I reaction product or the modified substance of the reaction product.

10. The method as recited in claim 9 , wherein the treating liquid is heated or cooled.