Asymmetrically thinned active array TR module and antenna architecture
An asymmetrically thinned transmit/receive (TR) module and antenna architecture is provided. In one embodiment, the invention relates to an active antenna assembly including at least one multi-channel transmit/receive (TR) module for reducing power consumption, the antenna assembly including the at least one TR module including a first phase shifter, a first switch coupled to the first phase shifter, the first switch configured to switch between a transmit circuit and a receive circuit, the transmit circuit including a plurality of first power amplifiers coupled to the first switch, the receive circuit including a low noise amplifier coupled to the first switch and to a plurality of second switches, where each of the plurality of second switches is configured to switch between one of the plurality of first power amplifiers and the low noise amplifier.
1. An active antenna assembly comprising at least one multi-channel transmit/receive (TR) module for reducing power consumption, the antenna assembly comprising:
the at least one TR module comprising:
a first phase shifter;
a first switch coupled to the first phase shifter, the first switch configured to switch between a transmit circuit and a receive circuit;
the transmit circuit comprising a plurality of first power amplifiers coupled to the first switch;
the receive circuit comprising a low noise amplifier coupled to the first switch and to a plurality of second switches;
wherein each of the second switches is configured to switch between one of the first power amplifiers and the low noise amplifier.
2. The antenna assembly of claim 1 , wherein the transmit circuit further comprises a second power amplifier coupled in series between the first switch and the plurality of first power amplifiers.
3. The antenna assembly of claim 1 , further comprising:
a plurality of second phase shifters, each second phase shifter coupled to one of the second switches; and
a plurality of radiating elements, each radiating element coupled to one of the second phase shifters.
4. The antenna assembly of claim 3 , wherein each of the second phase shifters comprises at least two phase bits.
5. The antenna assembly of claim 1 , wherein the first phase shifter comprises a 180 degree phase shifter.
6. The antenna assembly of claim 1 , further comprising:
a linear RF feed coupled to the first phase shifter;
a planar RF feed coupled to the linear RF feed; and
a circulator coupled to the planar RF feed.
7. The antenna assembly of claim 1 , further comprising:
four second phase shifters, each second phase shifter coupled to one of the second switches; and
four radiating elements, each radiating element coupled to one of the second phase shifters;
wherein the plurality of first power amplifiers comprises four power amplifiers; and
wherein the plurality of second switches comprises four second switches.
8. A multi-channel transmit/receive (TR) module for reducing power consumption on receive, the TR module comprising:
a first phase shifter;
a first switch coupled to the first phase shifter, the first switch configured to switch between a transmit circuit and a receive circuit;
the transmit circuit comprising:
four first power amplifiers; and
a power divider circuit for coupling the first switch to the four first power amplifiers; and
the receive circuit comprising:
a low noise amplifier coupled to the first switch; and
a power combiner circuit for coupling the low noise amplifier to four second switches;
wherein each of the four second switches is configured to switch between one of the first power amplifiers and the power combiner circuit.
9. The TR module of claim 8 , wherein TR module is implemented using a single chip.
10. The TR module of claim 8 , wherein the transmit circuit further comprises a second power amplifier coupled in series between the first switch and the four first power amplifiers.
11. The TR module of claim 10 , further comprising an multi-layer assembly comprising:
a first substrate layer comprising:
the low noise amplifier; and
the power combiner circuit;
a second substrate layer comprising:
the second power amplifier;
the power divider circuit;
the first power amplifiers; and
the second switches; and
a third substrate layer comprising:
the first phase shifter; and
the first switch.
12. The TR module of claim 11 , wherein the multi-layer assembly further comprises:
a plurality of vias for coupling the layers and at least two components on the layers; and
a plurality of solder bumps for coupling the layers and at least two components on the layers.
13. The TR module of claim 11 , further comprising a wafer level package comprising the first substrate layer, the second substrate layer, and the third substrate layer.
14. The TR module of claim 10 , further comprising an multi-layer assembly comprising:
a first layer comprising:
the first phase shifter;
the first switch;
the second power amplifier;
the power divider circuit;
the first power amplifiers;
the second switches; and
the low noise amplifier; and
a second layer comprising the power combiner circuit.
15. The TR module of claim 14 , wherein the multi-layer assembly further comprises:
a plurality of vias for coupling the layers and at least two components on the layers; and
a plurality of solder bumps for coupling the layers and at least two components on the layers.
16. The TR module of claim 14 :
wherein a semiconductor die comprises the first layer; and
wherein a chip scale package comprises the second layer.
17. The TR module of claim 8 , further comprising:
four second phase shifters, each second phase shifter coupled to one of the second switches; and
four radiating elements, each radiating element coupled to one of the second phase shifters.