Solid-state imaging device, production method of the same, and imaging apparatus
In a solid-state imaging device, the pixel circuit formed on the first surface side of the semiconductor substrate is shared by a plurality of light reception regions. The second surface side of the semiconductor substrate is made the light incident side of the light reception regions. The second surface side regions of the light reception regions formed in the second surface side part of the semiconductor substrate are arranged at approximately even intervals and the first surface side regions of the light reception regions formed in the first surface side part of the semiconductor substrate are arranged at uneven intervals, respectively, and the second surface side regions and the first surface side regions are joined respectively in the semiconductor substrate so that the light reception regions extend from the second surface side to the first surface side of the semiconductor substrate.
1. A solid-state imaging device comprising:
a semiconductor substrate with a first surface and a second surface opposite the first surface;
a plurality of light reception regions formed in the semiconductor substrate, respectively having first surface side regions formed in a first surface side part on the first surface of the semiconductor substrate and second surface side regions formed in a second surface side part on the second surface of the semiconductor substrate; and
a pixel circuit formed on the first surface side of the semiconductor substrate and shared by the plurality of light reception regions,
wherein
the second surface side, opposite the first surface side where the pixel circuit is formed, of the semiconductor substrate is made a light incident side of the light reception regions, and
the second surface side regions of the light reception regions formed in the second surface side part are arranged at approximately even intervals and the first surface side regions of the light reception regions formed in the first surface side part are arranged at uneven intervals, respectively, and the second surface side regions and the first surface side regions of the light reception regions are joined respectively in the semiconductor substrate so that the light reception regions extend from the second surface side to the first surface side of the semiconductor substrate.
2. The solid-state imaging device according to claim 1 , wherein depths of the second surface side regions of the light reception regions are from 1 μm to 5 μm from the second surface of the semiconductor substrate.
3. The solid-state imaging device according to claim 1 , wherein the second surface side regions of the light reception regions are formed by ion implantation from the first surface side of the semiconductor substrate.
4. The solid-state imaging device according to claim 3 , wherein the ion implantation is carried out several times while changing energy, and ion impurity densities of the first surface side regions are higher than ion impurity densities of the second surface side regions.
5. The solid-state imaging device according to claim 3 , wherein the ion implantation is carried out before formation of device separation regions.
6. An imaging apparatus comprising:
a solid-state imaging device;
an imaging optical unit guiding light from an imaging subject to the solid-state imaging device; and
a signal processing unit processing an image signal outputted from the solid-state imaging device,
wherein
the solid-state imaging device includes,
a semiconductor substrate with a first surface and a second surface opposite the first surface;
a plurality of light reception regions formed in the semiconductor substrate, respectively having first surface side regions formed in a first surface side part on the first surface of the semiconductor substrate and second surface side regions formed in a second surface side part on the second surface of the semiconductor substrate; and
a pixel circuit formed on the first surface side of the semiconductor substrate and shared by the plurality of light reception regions,
wherein
the second surface side, opposite the first surface side where the pixel circuit is formed, of the semiconductor substrate is made a light incident side of the light reception regions, and
wherein
the second surface side regions of the light reception regions formed in the second surface side part are arranged at approximately even intervals and the first surface side regions of the light reception regions formed in the first surface side part are arranged at uneven intervals, respectively, and the second surface side regions and the first surface side regions of the light reception regions are joined respectively in the semiconductor substrate so that the light reception regions extend from the second surface side to the first surface side of the semiconductor substrate.