Wideband low-noise amplifier

1. A wideband low-noise amplifier comprising:

a source-degenerated common-source amplifier configured to amplify an input signal to output a first signal that is opposite in phase to the input signal;

a common-gate amplifier connected in parallel to the source-degenerated common-source amplifier and configured to amplify the input signal to output a second signal that has the same phase as the input signal; and

a matching frequency band determiner configured to isolate an input terminal of the source-degenerated common-source amplifier from an input terminal of the common-gate amplifier and to determine matching frequency bands of the source-degenerated common-source amplifier and the common-gate amplifier, wherein the matching frequency bands are different from and substantially continuous with each other.

2. The wideband low-noise amplifier of claim 1 , wherein the matching frequency band determiner comprises at least one of:

a first impedance disposed at the input terminal of the source-degenerated common-source amplifier to determine the matching frequency band of the source-degenerated common-source amplifier; and

a second impedance disposed at the input terminal of the common-gate amplifier to determine the matching frequency band of the common-gate amplifier.

3. The wideband low-noise amplifier of claim 2 , wherein each of the first impedance and the second impedance comprises an inductor or an inductor and a capacitor that are connected in series to each other.

4. The wideband low-noise amplifier of claim 2 , wherein the source-degenerated common-source amplifier comprises:

an inductor connected to a ground voltage;

a first transistor having a gate connected to the first impedance and a source connected to the inductor, and amplifying an input signal, which is applied through the first impedance to the gate thereof, to output the resulting signal through a drain thereof; and

a resistor applying a bias voltage to the gate of the first transistor.

5. The wideband low-noise amplifier of claim 2 , wherein the common-gate amplifier comprises:

a third impedance connected to a ground voltage;

a second transistor having a source connected commonly to the second impedance and the third impedance and a gate to which a bias voltage is applied, and amplifying an input signal, which is applied through the second impedance to the source thereof, to output the resulting signal through a drain thereof, and a resistor applying the bias voltage to the gate of the second transistor.

6. The wide band low-noise amplifier of claim 5 , wherein the third impedance comprises an inductor.

7. The wideband low-noise amplifier of claim 1 , further comprising:

a current buffer comprising a third transistor and a fourth transistor respectively connected in cascade to the source-degenerated common-source amplifier and the common-gate amplifier to increase a reverse isolation; and

an output load configured to extend the frequency bandwidth of the first signal and the frequency bandwidth of the second signal and to even a power gain.

8. The wideband low-noise amplifier of claim 7 , wherein the output load comprises a shunt-peaking network or a tuning switch network.