Semiconductor light-emitting device and a method to produce the same
A new structure of a semiconductor optical device and a method to produce the device are disclosed. One embodiment of the optical device of the invention provides a blocking region including, from the side close to the mesa, a p-type first layer and a p-type second layer. The first layer is co-doped with an n-type impurity and a p-type impurity. The doping concentration of the p-type impurity in the first layer is smaller than that in the second layer, so, the first layer performs a function of a buffer layer for the Zn diffusion from the second layer to the active layer in the mesa structure.
1. A method for manufacturing a semiconductor optical device, comprising steps of:
forming a mesa on a semiconductor substrate, said mesa including a lower cladding layer, an active layer, and an upper cladding layer;
forming a blocking region so as to bury said mesa by a sequential growth including:
growing a first semiconductor layer made of InP doped with n-type impurities at least on a side wall of said active layer in said mesa,
growing a second semiconductor layer on said first semiconductor layer, said second semiconductor layer being made of p-type InP doped with zinc (Zn), and
growing a third semiconductor layer made of n-Type InP doped with n-type impurities; and
converting said first semiconductor layer into a p-type semiconductor layer by heat treatment.
2. The method according to claim 1 ,
wherein a doping concentration of said n-type impurities in said first semiconductor layer is greater than a doping concentration of Zn in said second semiconductor layer.
3. The method according to claim 2 ,
further comprising a step for forming a first additional semiconductor layer made of p-type InP doped with Zn after said step for forming said first semiconductor layer before said step for forming said second semiconductor layer.
4. The method according to claim 3 ,
wherein said doping concentration of said n-type impurities in said first semiconductor layer is greater than a doping concentration of said Zn in said first additional semiconductor layer.
5. The method according to claim 3 ,
wherein a doping concentration of said Zn in said first additional semiconductor layer is smaller than said doping concentration of Zn in said second semiconductor layer.
6. The method according to claim 5 ,
further comprising a step for forming a second additional semiconductor layer made of n-type InP after said step for forming said first additional semiconductor layer before said step for forming said second semiconductor layer, said second additional semiconductor layer being converted into a p-type semiconductor layer by said heat treatment.
7. The method according to claim 2 ,
further comprising a step for forming a first additional semiconductor layer made of un-doped InP after said step for forming said first semiconductor layer before said step for forming said second semiconductor layer.
8. The method according to claim 7 ,
further comprising a step for forming a second additional semiconductor layer made of n-type InP after said step for forming said first additional semiconductor layer before said step for forming said second semiconductor layer, said second additional semiconductor layer being converted into a p-type semiconductor layer by said heat treatment.
9. A method for manufacturing a semiconductor optical device, comprising steps of:
forming a mesa on a semiconductor substrate, said mesa including a lower cladding layer, an active layer, and an upper cladding layer;
forming a blocking region so as to bury said mesa by a sequential growth including:
growing a first additional semiconductor layer made of InP doped with zinc (Zn),
growing a first semiconductor layer made of InP doped with n-type impurities at least on a side wall of said active layer in said mesa,
growing a second semiconductor layer on said first semiconductor layer, said second semiconductor layer being made of p-type InP doped with zinc (Zn), and
growing a third semiconductor layer made of n-Type InP doped with n-type impurities; and
converting said first semiconductor layer into a p-type semiconductor layer by heat treatment.
10. The method according to claim 9 ,
wherein a doping concentration of Zn atoms in said first additional semiconductor layer is lower than a doping concentration of Zn atoms in said second semiconductor layer.
11. The method according to claim 10 ,
wherein a doping concentration of said n-type impurities in said first semiconductor layer is higher than a doping concentration of Zn atoms in said second semiconductor layer.