Semiconductor contact barrier
View Patent ↗System and method for reducing contact resistance and improving barrier properties is provided. An embodiment comprises a dielectric layer and contacts extending through the dielectric layer to connect to conductive regions. A contact barrier layer is formed between the conductive regions and the contacts by electroless plating the conductive regions after openings have been formed through the dielectric layer for the contact. The contact barrier layer is then treated to fill the grain boundary of the contact barrier layer, thereby improving the contact resistance. In another embodiment, the contact barrier layer is formed on the conductive regions by electroless plating prior to the formation of the dielectric layer.
1. A method for forming a contact comprising:
forming a conductive region;
forming a dielectric layer over the conductive region;
forming at least one opening through the dielectric layer to expose at least a portion of the conductive region, the at least one opening comprising sidewalls and a bottom above the conductive region;
selectively forming a contact barrier layer along the bottom of the opening, the contact barrier layer comprising a first material;
treating at least a portion of the contact barrier layer to form a second material within the contact barrier layer; and
forming a conductive material in contact with the sidewalls and over the contact barrier layer.
2. The method of forming a contact according to claim 1 , wherein the selectively forming a contact barrier layer is performed at least in part through electroless plating.
3. The method of forming a contact according to claim 1 , wherein the first material comprises a material selected from the group consisting essentially of CoW, CoWB, or CoWP.
4. The method of forming a contact according to claim 1 , wherein the treating at least a portion of the contact barrier layer is performed at least in part by treating with silane.
5. The method of forming a contact according to claim 1 , wherein the treating at least a portion of the contact barrier layer is performed at least in part by treating with ammonia.
6. The method of forming a contact according to claim 1 , wherein the treating at least a portion of the contact barrier layer is performed at least in part by treating with germane.
7. The method of forming a contact according to claim 1 , wherein the treating at least a portion of the contact barrier layer is performed at least in part by treating with a combination of silane and germane.
8. The method of forming a contact according to claim 1 , wherein the treating at least a portion of the contact barrier layer is performed at least in part by treating with a combination of silane and ammonia.
9. The method of forming a contact according to claim 1 , wherein the treating at least a portion of the contact barrier layer is performed at least in part by treating with a combination of germane and ammonia.
10. The method of forming a contact according to claim 1 , wherein the treating at least a portion of the contact barrier layer is performed at least in part by treating with a combination of silane, germane and ammonia.
11. A method for forming a contact comprising:
providing a conductive region;
forming a dielectric layer over the conductive region;
forming a conductive plug through the dielectric layer and over the conductive region;
forming a treated conductive layer interposed between the conductive region and the conductive plug, wherein the treated conductive layer comprises cobalt.
12. The method of forming a contact according to claim 11 , wherein the forming a treated conductive layer is performed prior to the forming a dielectric layer.
13. The method of forming a contact according to claim 11 , wherein the forming a treated conductive layer is performed subsequent to the forming a dielectric layer.
14. The method of forming a contact according to claim 11 , wherein the treated conductive layer comprises a material selected from the group consisting essentially of CoWGe, CoWSi, CoWGeN, CoWSiN, or CoWGeSiN.
15. The method of forming a contact according to claim 11 , wherein the treated conductive layer comprises a material selected from the group consisting essentially of CoWPGe, CoWPSi, CoWGePN, CoWPSiN, or CoWPGeSiN.
16. The method of forming a contact according to claim 11 , wherein the treated conductive layer comprises a material selected from the group consisting essentially of CoWBGe, CoWBSi, CoWGeBN, CoWBSiN, or CoWBGeSiN.
17. A method of forming a contact to a conductive region through a dielectric layer comprising:
providing a conductive region;
selectively forming a contact barrier layer on exposed regions of the conductive region, the contact barrier layer comprising a first material;
transforming at least a portion of the first material into a second material through an introduction of impurities;
forming a dielectric layer over the conductive region;
forming an opening through the dielectric layer over at least a portion of the conductive region; and
filling the opening with conductive material.
18. The method of forming a contact according to claim 17 , wherein the selectively forming a contact barrier is performed prior to forming a dielectric layer.
19. The method of forming a contact according to claim 17 , wherein the selectively forming a contact barrier is performed after forming an opening through the dielectric layer.
20. The method of forming a contact according to claim 17 , wherein the transforming at least a portion of the first material is performed at least in part through plasma treatment using one or more of the group consisting essentially of silane, germane, and ammonia.