IP Library Granted Patent US 7,906,350
Granted Patent B2
US 7,906,350 · App. 12/651,652 · Granted Mar 15, 2011

Method for calibrating a metrology tool

Assignee: Toppan Photomasks, Inc.
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Quick Facts
Patent No.
US 7,906,350
App. No.
12/651,652
Granted
Mar 15, 2011
Kind
B2
Abstract

A method and apparatus for calibrating a metrology tool are disclosed. The apparatus includes a substrate having at least one calibration site formed thereon. The calibration site includes a pattern of cells that have at least one feature disposed in a surface of the substrate. The feature provided for measurement by a step height metrology tool and a phase metrology tool to calibrate the step height and phase metrology tools.

Claims (14)

1. A method for calibrating a metrology tool, comprising:

providing a substrate including at least one calibration site, the calibration site including a pattern of cells;

providing at least one feature in each of the cells, the at least one feature disposed in a surface of the substrate;

measuring the feature using a phase metrology tool to provide a measured phase shift;

comparing the measured phase shift with an initial phase shift associated with the feature; and

adjusting the phase metrology tool if the measured phase shift does not match the initial phase shift.

2. The method of claim 1 , further comprising:

measuring the feature using a step height metrology tool to provide a measured depth;

comparing the measured depth with an initial depth associated with the feature; and

adjusting the step height metrology tool if the measured depth does not match the initial depth.

3. The method of claim 1 , further comprising the phase metrology tool including an exposure wavelength between approximately 100 nanometers and approximately 400 nanometers.

4. The method of claim 3 , further comprising the feature including a depth operable to produce a phase shift of approximately 180 degrees at the exposure wavelength.

5. The method of claim 1 , further comprising providing a plurality of calibration sites formed on the substrate, a first calibration site located in a center of the substrate and a second calibration site located proximate an edge of the substrate.

6. The standard of claim 1 , further comprising forming the feature in the substrate using a wet etch process.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 4, 2010
From: HUGHES, GREGORY P.
To: DUPONT PHOTOMASKS, INC.
Reel/Frame 023728/0587 →
MERGER Recorded Jan 4, 2010
From: DUPONT PHOTOMASKS, INC.
To: TOPPAN PHOTOMASKS, INC.
Reel/Frame 023728/0613 →
Continuity (4)
Division 11332106 · Jan 13, 2006
Continuation PCTUS2004023070 · Jul 16, 2004
Provisional Application 60488150 · Jul 17, 2003
Related Publication 20100107724A1 · May 6, 2010