Method and apparatus for photomask plasma etching
A method and apparatus for etching photomasks are provided herein. The apparatus includes a process chamber with a shield above a substrate support. The shield comprises a plate with apertures, and the plate has two zones with at least one characteristic, such as material or potential bias, that is different from each other. The method provides for etching a photomask substrate with a distribution of ions and neutral species that pass through the shield.
1. An apparatus for plasma etching, comprising:
a process chamber;
a support pedestal disposed in the process chamber and configured to receive a photomask thereon;
an RF power source for forming a plasma within the chamber; and
a planar shield disposed in the chamber above the pedestal, the planar shield comprising a plate having a plurality of apertures and configured to control the distribution of charged and neutral species passing through the plate, wherein the plate comprises two separate adjacent zones, each zone having apertures and having at least one characteristic different from one each other, the at least one characteristic being the material, wherein each of two separate zones comprises a material with a dielectric constant different from each other, the material being selected from the group consisting of anodized aluminum, ceramics, alumina, yttria, materials having a dielectric constant higher than about 4.
2. The apparatus of claim 1 , wherein the two separate adjacent zones are characterized by two open areas that are different from each other, the two open areas being defined by one or more apertures from the plurality of apertures.
3. The apparatus of claim 1 , wherein the plate further comprises zones arranged in at least one of a wedge, concentric ring, or grid pattern.
4. The apparatus of claim 1 , wherein the two separate adjacent zones have spatial configurations that correlate with respective regions on the photomask characterized by different pattern densities.