IP Library Granted Patent US 7,910,385
Granted Patent B2
US 7,910,385 · App. 11/433,015 · Granted Mar 22, 2011

Method of fabricating microelectronic devices

Assignee: Micron Technology, Inc.
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Quick Facts
Patent No.
US 7,910,385
App. No.
11/433,015
Granted
Mar 22, 2011
Kind
B2
Abstract

Microelectronic devices and methods for manufacturing microelectronic devices are described herein. An embodiment of one such method includes attaching a plurality of singulated microelectronic dies to a removable support member with an active side of the individual dies facing toward the support member, depositing a flowable material onto the dies and a portion of the removable support member such that the flowable material covers a back side of the individual dies and is disposed between adjacent dies, and removing the support member from the active sides of the dies.

Claims (52)

1. A method for manufacturing microelectronic devices, the method comprising:

attaching a plurality of singulated microelectronic dies to a removable support member with an active side of the individual dies contacting the support member, wherein the active sides of the dies include electrical terminals, and individual dies have a first lateral edge and a second lateral edge opposite the first lateral edge;

molding a flowable material onto the dies and at least a portion of the removable support member such that the molded material covers a back side of the individual dies and is disposed between adjacent dies;

removing the support member from the active sides of the dies;

forming redistribution structures, wherein individual redistribution structures are formed at a corresponding die and include conductive links electrically connected to electrical terminals of the corresponding die, ball-pads electrically coupled to the conductive links, and first and second dielectric layers having a peripheral region extending across the molded material outboard from the bond-pads;

cutting the molded material, the first dielectric layer and the second dielectric layer between adjacent lateral edges of each neighboring die to singulate the dies, wherein the cut molded material forms individual casings having a peripheral portion extending laterally outward from the dies, wherein the peripheral region of the first and second dielectric layers is supported by the peripheral portion of the casing, and wherein the peripheral region of the first and second dielectric layers extends outboard of the bond-pads from both the first and second opposing lateral edges of each die and outboard of the conductive links of the redistribution structures; and

supporting the singulated die with a testing device with a support surface of the testing device contacting only the peripheral region of the second dielectric layer of the singulated die.

2. The method of claim 1 , further comprising:

stress testing a first separated die;

coupling the first separated die to a substrate after stress testing; and

attaching a second separated die to the first separated die such that the first separated die is positioned between the second separated die and the substrate.

3. The method of claim 1 , wherein the casing covers the back side of the die, and the method further comprises coupling the casing to a substrate such that the casing is between the backside of the die and the substrate.

4. The method of claim 1 wherein attaching the singulated dies to the removable support member comprises coupling the singulated dies to a releasable film.

5. The method of claim 1 wherein molding the flowable material comprises:

placing the singulated dies and at least a portion of the removable support member in a mold cavity; and

flowing a mold compound into the mold cavity and onto the dies.

6. The method of claim 1 , further comprising:

forming the dies on a microfeature workpiece with the dies spaced apart by a first distance; and

cutting the microfeature workpiece to separate the dies from each other before attaching the singulated dies to the removable support member;

wherein attaching the singulated dies comprises arranging the dies on the removable support member with the dies spaced apart by a second distance greater than the first distance.

7. The method of claim 1 , further comprising:

heating and operating at least one of the separated dies to stress test the at least one separated die.

8. A method for manufacturing microelectronic devices having microelectronic dies, the individual microelectronic dies including an active side, a plurality of terminals on the active side, and a back side opposite the active side, the method comprising:

coupling the microelectronic dies to a support member with the active sides attached directly to the support member;

molding a flowable dielectric material such that the molded dielectric material covers at least a portion of the individual dies and at least a portion of the support member between adjacent dies;

detaching the support member from the dies and the molded dielectric material;

forming redistribution structures on the active sides of the dies and the molded dielectric material, wherein individual redistribution structures have a plurality of bond pads and a dielectric peripheral region extending outwardly from the dies across the molded dielectric material;

cutting the dielectric material between adjacent dies to separate at least some of the at least partially covered dies; and

placing at least one separated die in a testing device with a support surface of the testing device contacting only the dielectric peripheral region of the redistribution structure outboard the bond pads.

9. The method of claim 8 wherein placing at least one separated die in the testing device comprises positioning a first separated die in the testing device, and wherein the method further comprises:

attaching and electrically connecting the first separated die to a substrate;

coupling a second separated die to the first separated die such that the first separated die is positioned between the second separated die and the substrate; and

electrically connecting the second separated die to the substrate.

10. The method of claim 8 wherein:

placing at least one separated die in the testing device comprises positioning at least one separated die in a thermal stress testing device; and

the method further comprises attaching the at least one separated die to a substrate after positioning the die in the thermal stress testing device.

11. A method for packaging a microelectronic device, the method comprising:

attaching a microelectronic device to a support member, the support member having a plurality of support member terminals and conductive traces electrically coupled to the support member terminals, and the microelectronic device including (a) a die having an active side, a back side opposite the active side facing the support member, and a plurality of ends extending between the active side and the back side, including a first lateral end and a second lateral end opposite the first lateral end, (b) a casing covering at least a portion of the ends of the die and having a peripheral portion extending laterally outward from the ends of the dies, and (c) a redistribution structure on the active side of the die and the peripheral portion of the casing, the redistribution structure having a plurality of bond-pads and a dielectric layer having a peripheral region extending outboard of the bond-pads from both the first and second opposing lateral ends by a distance sufficient to contact a support surface of a testing device;

wire-bonding the contacts of the redistribution structure to corresponding terminals on the support member;

encapsulating the microelectronic device, the wire-bonds, and at least a portion of the support member; and

supporting the microelectronic device with the testing device, with the support surface of the testing device contacting only the peripheral region of the dielectric layer.

12. The method of claim 11 wherein attaching the microelectronic device to the support member comprises coupling a microelectronic device with a known good die to the support member.

13. The method of claim 11 wherein:

the microelectronic device comprises a first microelectronic device;

the method further comprises coupling a second microelectronic device to the redistribution structure on the first microelectronic device between the contacts of the redistribution structure such that the first microelectronic device is positioned between the second microelectronic device and the support member, the second microelectronic device including (a) a die having an active side, a back side opposite the active side, and a plurality of ends extending between the active side and the back side, and (b) a casing covering at least a portion of the ends of the die; and

encapsulating the microelectronic device, the wire-bonds, and at least a portion of the support member comprises encasing the first and second microelectronic devices, the wire-bonds, and at least a portion of the support member.

14. The method of claim 11 wherein the microelectronic device comprises a first microelectronic device, wherein the terminals comprise a plurality of first terminals, wherein the support member further comprises a plurality of second terminals, and wherein the method further comprises:

coupling a second microelectronic device to the first microelectronic device such that the first microelectronic device is positioned between the second microelectronic device and the support member, the second microelectronic device including (a) a die having an active side, a back side opposite the active side, and a plurality of ends extending between the active side and the back side, (b) a casing covering at least a portion of the ends of the die, and (c) a redistribution structure on the active side of the die and the casing, the redistribution structure having a plurality of contacts positioned outboard the die; and

wire-bonding the contacts of the second microelectronic device to corresponding second terminals on the support member.

15. The method of claim 11 , further comprising stress testing the microelectronic device before attaching the microelectronic device to the support member.

16. The method of claim 11 , further comprising testing the microelectronic device in the testing device before attaching the microelectronic device to the support member.

17. The method of claim 11 , further comprising encasing the back side and the ends of the die before attaching the microelectronic device to the support member.

Assignments (8)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050937/0001 →
RELEASE OF SECURITY INTEREST Recorded Aug 23, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 047243/0001 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Jun 8, 2017
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 043079/0001 →
PATENT SECURITY AGREEMENT Recorded Jun 2, 2016
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 038954/0001 →
SECURITY INTEREST Recorded May 12, 2016
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 038669/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 12, 2006
From: KWEON, YOUNG DO; BROOKS, J. MICHAEL; JIANG, TONGBI
To: MICRON TECHNOLOGY, INC.
Reel/Frame 017871/0811 →
Continuity (1)
Related Publication 20070262436A1 · Nov 15, 2007