Capacitor with pillar type storage node and method for fabricating the same including conductive capping layer

1. A method for fabricating a capacitor in a semiconductor device, the method comprising:

forming a sacrificial layer with an open region over a substrate;

forming a first conductive layer within the open region to form a storage node that includes a cylindrical portion having an interior crevice;

forming a supporter within the interior crevice such that the supporter is disposed entirely within the interior crevice;

forming a conductive capping layer over the supporter and contacting the storage node so as to seal an entrance to the interior crevice;

removing the sacrificial layer;

forming a dielectric layer over the storage node; and

forming a plate node on the dielectric layer.

2. The method of claim 1 , wherein:

the forming of the supporter includes

forming an insulation layer to fill the interior crevice, and;

removing a portion of the insulation layer so that the remaining portion of the insulation layer at least partially fills the interior crevice, the remaining portion of the insulation layer being used as the supporter; and

the forming of a capping layer includes

forming a second conductive layer to seal tops of the remaining portion of the insulation layer and the storage node, and

removing a portion of the second conductive layer so that the remaining portion of the second conductive layer is disposed within the open region, the remaining portion of the second conductive layer being used as the conductive capping layer.

3. The method of 2 , wherein the conductive capping layer is disposed entirely within the interior crevice.

4. The method of claim 2 , wherein the conductive capping layer contacts a top surface of the storage node and a top surface of the supporter.

5. The method of claim 2 , wherein the first and second conductive layers comprise the same material.

6. The method of claim 2 , wherein the first and second conductive layers each comprises material containing ruthenium (Ru).

7. The method of claim 6 , wherein the first and second conductive layers each comprises ruthenium (Ru) or ruthenium dioxide (RuO 2 ), or both.

8. The method of claim 1 , wherein the supporter comprises an oxide layer or a nitride layer.

9. The method of claim 1 , wherein the supporter is formed of one material selected from the group consisting of silicon nitride (Si 3 N 4 ), aluminum oxide (Al 2 O 3 ), hafnium oxide (HfO 2 ), and zirconium oxide (ZrO 2 ).

10. The method of claim 1 , wherein the storage node comprises material containing ruthenium (Ru).

11. The method of claim 10 , wherein the material containing ruthenium (Ru) comprises ruthenium (Ru) or ruthenium oxide (RuO 2 ), or both.

12. The method of claim 3 , wherein a top surface of the conductive capping layer is coplanar with a top surface of the storage node.