Production process for high purity polycrystal silicon and production apparatus for the same

1. A production process for high purity polycrystal silicon characterized by:

using a vertical reactor comprising a silicon chloride gas-feeding nozzle, a reducing agent gas-feeding nozzle and a waste gas discharge pipe, in which the silicon chloride gas-feeding nozzle is inserted and installed from an upper part of the reactor into an inside of the reactor,

feeding a silicon chloride gas from the silicon chloride gas-feeding nozzle and a reducing agent gas from the reducing agent gas-feeding nozzle into the reactor,

forming polycrystal silicon at a tip part of the silicon chloride gas-feeding nozzle by the reaction of the silicon chloride gas with the reducing agent gas, and

allowing the polycrystal silicon to grow from the tip part of the silicon chloride gas-feeding nozzle toward a lower part thereof.

2. The production process for high purity polycrystal silicon as described in claim 1 , comprising a step for continuously taking out the polycrystal silicon to the outside of the reactor.

3. The production process for high purity polycrystal silicon as described in claim 2 , wherein the step for taking out the polycrystal silicon to the outside of the reactor is carried out by allowing the polycrystal silicon to fall into a cooling zone provided at a lower part of the vertical reactor by an own weight thereof or by a mechanical method to cool it and then discharging it from the bottom of the vertical reactor.

4. The production process for high purity polycrystal silicon as described in claim 2 , wherein the step for taking out the polycrystal silicon to the outside of the reactor is carried out by allowing the polycrystal silicon to fall into a lower part of the vertical reactor by an own weight thereof or by a mechanical method, melting the polycrystal silicon by heating the lower part of the vertical reactor to a temperature of not lower than a melting point of silicon and then discharging it from the bottom of the vertical reactor in the form of a silicon melt.

5. The production process for high purity polycrystal silicon as described in claim 1 , wherein the polycrystal silicon grows without being brought into contact with an inner wall surface of the vertical reactor.

6. The production process for high purity polycrystal silicon as described in claim 1 , wherein the silicon chloride gas is reacted with the reducing agent gas at 800° C. to 1200° C.

7. The production process for high purity polycrystal silicon as described in claim 1 , wherein a face direction of the polycrystal silicon in a crystal growth direction is a (111) face.

8. The production process for high purity polycrystal silicon as described in claim 1 , wherein the silicon chloride gas is at least one gas selected from the group consisting of chlorosilanes represented by Si m H n Cl 2m+2−n (m is an integer of 1 to 3, and n is an integer of 0 or more which does not exceed 2 m+2).

9. The production process for high purity polycrystal silicon as described in claim 1 , wherein the silicon chloride gas is a silicon tetrachloride gas.

10. The production process for high purity polycrystal silicon as described in claim 1 , wherein the reducing agent gas is a gas of at least one selected from the group consisting of sodium, potassium, magnesium, zinc and hydrogen.

11. The production process for high purity polycrystal silicon as described in claim 1 , wherein the reducing agent gas is a zinc gas.