Plasma processing apparatus

1. A plasma processing apparatus comprising:

a sealable chamber that is sealable;

a gas supply section that supplies a reactive material gas into the chamber; and

a plurality of cathode and anode electrode pairs provided within the chamber, the electrode pairs being connected to an external power supply and configured to produce plasma discharges through the material gas, respectively, wherein

the plurality of cathode and anode electrode pairs are provided at a distance from one another at which the plasma discharges are prevented from interfering with one another, and have an empty space between the adjacent cathode and anode electrode pairs;

a processing target is disposed between a cathode electrode and an anode electrode in each cathode and anode electrode pair, and subjected to a plasma discharge processing;

a distance between the cathode electrode and the anode electrode in the each anode and cathode electrode pair is a predetermined distance, and a distance between a cathode electrode of one of the anode and cathode electrode pairs and an anode electrode of an anode and cathode electrode pair adjacent to the one of the anode and cathode electrode pairs is at least twice as large as the predetermined distance.

2. The plasma processing apparatus according to claim 1 , wherein the plurality of cathode and anode electrode pairs are disposed in a manner that an anode electrode and a cathode electrode in each anode and cathode electrode pair are in a form of plates and in parallel to each other, and that discharge surfaces of cathode electrodes in the respective anode and cathode electrode pairs are oriented in a same direction.

3. The plasma processing apparatus according to claim 2 , wherein

the plurality of anode and cathode electrode pairs are disposed in series with the discharge surfaces of the cathode electrodes located generally perpendicularly to a bottom of the chamber.

4. The plasma processing apparatus according to claim 2 , wherein

the plurality of anode and cathode electrode pairs are disposed in series with the discharge surfaces of the cathode electrodes located generally horizontally and the cathode electrodes located at an upper side relative to the anode electrodes.

5. The plasma processing apparatus according to claim 4 , wherein

a substrate, which is a processing target, is mounted on an upper surface of each anode electrode.

6. The plasma processing apparatus according to claim 2 , wherein

the plurality of anode and cathode electrode pairs are disposed in series with the discharge surfaces of the cathode electrodes located generally horizontally and the cathode electrodes located at a lower side relative to the anode electrodes.

7. The plasma processing apparatus according to claim 6 , wherein

a substrate, which is a processing target, is mounted on an upper surface of each cathode electrode.

8. The plasma processing apparatus according to claim 2 , wherein

the plurality of anode and cathode electrode pairs are disposed in parallel with the discharge surfaces of the cathode electrodes located generally horizontally, the cathode electrodes located at an upper side relative to the anode electrodes, and the cathode electrodes and the anode electrodes located on the same planes, respectively.

9. The plasma processing apparatus according to claim 2 , wherein

the plurality of anode and cathode electrode pairs are disposed in parallel with the discharge surfaces of the cathode electrodes located generally horizontally, the cathode electrodes located at a lower side relative to the anode electrodes, and the cathode electrodes and the anode electrodes located on the same planes, respectively.

10. The plasma processing apparatus according to claim 2 , wherein

said predetermined distance is in a range from several millimeters to several tens of millimeters.

11. The plasma processing apparatus according to claim 1 wherein an interior of the cathode electrode is a cavity so that the material gas is introduced into the cavity, and many through holes for supplying the material gas to a surface of said substrate are formed on one surface of the cathode.

12. The plasma processing apparatus according to claim 1 , wherein the plasma processing apparatus is to form an amorphous film or a crystalline film on said substrate.

13. The plasma processing apparatus according to claim 1 , wherein the anode electrode is formed of aluminum alloy, and includes therein a heater.