Electrolyte pattern and method for manufacturing an electrolyte pattern
A method for manufacturing a gel electrolyte pattern is disclosed, the method comprising depositing an electrolyte precursor by inkjet printing onto a gelling agent layer. A gel electrolyte pattern is also disclosed, the gel electrolyte pattern comprising either a mixture of a gelling agent and an electrolyte precursor or the products of a chemical reaction between a gelling agent and an electrolyte precursor.
1. A method of forming a transistor, the method comprising:
forming a gate electrode, a source electrode and a drain electrode over a substrate;
forming a semiconductor material at least between the source electrode and the drain electrode;
forming a bank structure having an opening above the semiconductor material and the gate electrode;
forming an electrolyte inside the opening, the electrolyte being formed on the semiconductor material and being separated from the gate electrode; and
forming a gate electrode extension electrically connected to the electrolyte and the gate electrode.
2. The method of forming a transistor according to claim 1 , the forming of the bank structure comprising:
forming a bank layer so as to cover the semiconductor material; and
forming the opening through the bank layer.
3. The method of forming a transistor according to claim 1 , the forming of the electrolyte comprising:
forming a gelling agent layer on the semiconductor material, the gelling agent layer including a gelling agent; and
forming an electrolyte precursor onto the gelling agent layer, the gelling agent and the electrolyte precursor being selected such that the electrolyte precursor interacts with the gelling agent to form the electrolyte.
4. The method of forming a transistor according to claim 3 , the forming of the bank structure comprising:
forming a bank layer so as to cover the gelling agent layer after the gelling agent layer is formed; and
forming the opening through the bank layer before the electrolyte precursor is formed.
5. The method of forming a transistor according to claim 3 , the forming of the gelling agent layer comprising:
depositing an unpatterned gelling agent layer onto the semiconductor material; and
patterning the semiconductor material and the unpatterned gelling agent layer.
6. The method of forming a transistor according to claim 3 , the gelling agent layer including PVDF-HFP or PMMA.
7. The method of forming a transistor according to claim 3 , the gelling agent layer including nano-particles.
8. The method of forming a transistor according to claim 3 , the electrolyte precursor being configured to dissolve the gelling agent layer.
9. The method of forming a transistor according to claim 3 , the electrolyte precursor being configured to disperse the gelling agent layer.
10. The method of forming a transistor according to claim 1 , the gate electrode extension being deposited by inkjet printing.
11. The method of forming a transistor according to claim 10 , the forming of the electrolyte comprising:
forming a gelling agent layer on the semiconductor material, the gelling agent layer including a gelling agent; and
forming an electrolyte precursor onto the gelling agent layer, the gelling agent and the electrolyte precursor being selected such that the electrolyte precursor interacts with the gelling agent to form the electrolyte.
12. The method of forming a transistor according to claim 10 , the forming of the electrolyte comprising:
forming a gelling agent layer on the semiconductor material, the gelling agent layer including a gelling agent;
forming a bank layer so as to cover the gelling agent layer;
forming the opening through the bank layer; and
forming an electrolyte precursor onto the gelling agent layer, the gelling agent and the electrolyte precursor being selected such that the electrolyte precursor interacts with the gelling agent to form the electrolyte.
13. A method of forming a transistor having a gate electrode, a source electrode, a drain electrode, a semiconductor material, an electrolyte and a bank structure, the semiconductor material being disposed at least between the source electrode and the drain electrode, the bank structure having an opening above the semiconductor material and the gate electrode, the method comprising:
forming a gate electrode extension on the electrolyte and on the gate electrode by inkjet method.