Electrostatic discharge protection circuit device

1. An electrostatic discharge protection circuit device comprising:

a discharge circuit connected to a predetermined circuit node of a semiconductor device, and discharging the circuit node when surge voltage is applied to the circuit node, the discharge circuit including a silicon controlled rectifier having an anode, a cathode, a first gate and a second gate, and a current path between the anode and the cathode interposed between the circuit node and a supply node of reference voltage;

a trigger circuit connected to the discharge circuit, and triggering the discharge circuit to start a discharge operation of the discharge circuit, the trigger circuit including a first diode circuit having at least one diode, and an anode of the first diode circuit is connected to the first gate of the silicon controlled rectifier; and

a trigger control circuit having an input terminal and an output terminal, the output terminal being connected to the trigger circuit, the trigger control circuit including a switch element having a current path and a control electrode, the current path being interposed between the cathode of the first diode circuit and the supply node of reference voltage, and the control electrode being connected to the input terminal and supplied with a control voltage,

wherein, when the input terminal is floating, the discharge circuit discharges at the surge voltage applied to the circuit node, and when the input terminal is applied with a predetermined control voltage, the trigger, control circuit controls a trigger voltage and is capable of controlling the trigger voltage to prevent the discharge circuit from discharging, the trigger voltage being a voltage at which the trigger circuit starts the discharge operation of the discharge circuit.

2. The device according to claim 1 , wherein the circuit node is a power supply voltage node.

3. The device according to claim 1 , wherein the discharge circuit further includes a second diode circuit having at least one diode, and an anode of the second diode circuit is connected to the circuit node while a cathode thereof is connected to the anode of the silicon controlled rectifier.

4. The device according to claim 1 , wherein the discharge circuit further includes a first resistor connected between the second gate of the silicon controlled rectifier and the supply node of reference voltage.

5. The device according to claim 1 , wherein the trigger control circuit further includes a second resistor connected between the control electrode of the switch element and the supply node of reference voltage.

6. The device according to claim 1 , wherein the switch element is a P-channel MOS transistor.