Dynamic p-n junction growth
View Patent ↗Methods of fabricating semiconductor p-n junctions and semiconductor devices containing p-n junctions are disclosed in which the p-n junctions contain concentration profiles for the p-type and n-type dopants that are controllable and independent of a dopant diffusion profile. The p-n junction is disposed between a layer of semiconductor doped with a p-type dopant and a layer of semiconductor doped with an n-type dopant. The p-n junction is fabricated using a crystal growth process that allows dynamic control and variation of both p-type and n-type dopant concentrations during the crystal growth process.
1. A method of fabricating a semiconductor p-n junction configured to be disposed between a layer of semiconductor doped with a p-type dopant and a layer of semiconductor doped with an n-type dopant comprising the steps of:
growing the semiconductor p-n junction with a crystal growth process that allows simultaneous control and variation of p-type and n-type dopant concentrations during the crystal growth process;
dynamically controlling the p-type dopant concentration as the p-n junction is grown such that the p-type dopant concentration conforms to a predetermined concentration profile within the p-n junction which is independent of an p-type dopant diffusion profile; and
dynamically controlling the n-type dopant concentration as the p-n junction is grown such that the n-type dopant concentration conforms to a predetermined concentration profile within the p-n junction which is independent of an n-type dopant diffusion profile.
2. A method of fabricating a semiconductor p-n junction according to claim 1 , wherein the concentration profile of the p-type dopant in the p-n junction is substantially linear.
3. A method of fabricating a semiconductor p-n junction according to claim 1 , wherein the concentration profile of the n-type dopant in the p-n junction is substantially linear.
4. A method of fabricating a semiconductor p-n junction according to claim 1 , wherein the concentration profile of the p-type dopant in the p-n junction follows a predetermined curve.
5. A method of fabricating a semiconductor p-n junction according to claim 1 , wherein the concentration profile of the n-type dopant in the p-n junction follows a predetermined curve.
6. A method of fabricating a semiconductor p-n junction according to claim 1 , wherein the p-n junction is fabricated by a RF sputtering crystal growth process.
7. A method of fabricating a semiconductor p-n junction according to claim 1 , wherein the p-n junction is fabricated by a MBE (molecular beam epitaxy) crystal growth process.
8. A method of fabricating a semiconductor p-n junction according to claim 1 , wherein the p-n junction is fabricated by a CVD (chemical vapor deposition) crystal growth process.
9. A method of fabricating a semiconductor p-n junction according to claim 1 , wherein the p-n junction is fabricated by a MOCVD (metal organic chemical vapor deposition) crystal growth process.