Thermoelectric material and thermoelectric conversion module using the same
A thermoelectric material has a composition expressed by (Fe 1-p V p ) 100-x (Al 1-q Si q ) x (0.35≦p≦0.7, 0.01≦q≦0.7, 20≦x≦30 atomic %). The thermoelectric material includes a crystal phase having an L2 1 structure or a crystal phase having a B2 structure as a main phase.
1. A thermoelectric material comprising a composition expressed by a composition formula:
(Fe 1-p V p ) 100-x (Al 1-q Si q ) x
where, p is a value satisfying 0.5≦p≦0.6,
q is a value satisfying 0.01≦q≦0.7, and
x is a value satisfying 23≦x≦27 atomic %, and wherein
the thermoelectric material includes a crystal phase having an L2 1 structure as a main phase.
2. The material according to claim 1 , wherein the value q satisfies 0.05≦q≦0.5.
3. The material according to claim 1 , wherein a part of the V (vanadium) is replaced by at least one element selected from Ti (titanium), Zr (zirconium), Hf (hafnium), Nb (niobium), Ta (tantalum), Cr (chromium), Mo (molybdenum) and W (tungsten).
4. The material according to claim 1 , wherein a part of the Fe (iron) is replaced by at least one element selected from Mn (manganese), Co (cobalt), Ni (nickel), Cu (copper) and Ag (silver).
5. The material according to claim 1 , wherein a part of a total amount of the Al (aluminum) and Si (silicon) is replaced by at least one element selected from Ga (gallium), In (indium), Tl (thallium), Ge (germanium), Sn (tin), Sb (antimony) and Bi (bismuth).
6. The material according to claim 5 , wherein the part of the total amount of the Al (aluminum) and Si (silicon) is replaced by at least one element selected from Ga (gallium) and Sn (tin).
7. The material according to claim 6 , wherein an amount replaced by at least one element selected from the Ga (gallium) and the Sn (tin) is 10 atomic % or more and 30 atomic % or less of the total amount of the Al (aluminum) and Si (Silicon).
8. The material according to claim 7 , wherein the thermoelectric material has a thermal conductivity of 6.9 W/m·K or less.
9. A thermoelectric conversion module, comprising:
a first electrode;
a p-type thermoelectric element with one end connected to the first electrode;
a second electrode connected to the other end of the p-type thermoelectric element;
an n-type thermoelectric element with one end connected to the second electrode; and
a third electrode connected to the other end of the n-type thermoelectric element,
wherein at least one of the p-type thermoelectric element and the n-type thermoelectric element is composed of a thermoelectric material comprising a composition expressed by a composition formula:
(Fe 1-p V p ) 100-x (Al 1-q Si q ) x
where, p is a value satisfying 0.5≦p≦0.6, q is a value satisfying 0.01≦q≦0.7, and x is a value satisfying 23≦x≦27 atomic %, and wherein
the thermoelectric material includes a crystal phase having an L2 1 structure as a main phase.
10. The module according to claim 9 , wherein the value q satisfies 0.05≦q≦0.5.
11. The module according to claim 9 , wherein a part of the V (vanadium) is replaced by at least one element selected from Ti (titanium), Zr (zirconium), Hf (hafnium), Nb (niobium), Ta (tantalum), Cr (chromium), Mo (molybdenum) and W (tungsten).
12. The module according to claim 9 , wherein a part of the Fe (iron) is replaced by at least one element selected from Mn (manganese), Co (cobalt), Ni (nickel), Cu (copper) and Ag (silver).
13. The module according to claim 9 , wherein a part of a total amount of the Al (aluminum) and Si (silicon) is replaced by at least one element selected from Ga (gallium), In (indium), Tl (thallium), Ge (germanium), Sn (tin), Sb (antimony) and Bi (bismuth).
14. The module according to claim 9 , wherein the p-type thermoelectric element comprises a plurality of p-type thermoelectric elements and the n-type thermoelectric element comprises a plurality of n-type thermoelectric elements, and the plurality of p-type thermoelectric elements and the plurality of n-type thermoelectric elements are alternately disposed and connected in series with the first, second and third electrodes.
15. The module according to claim 13 , wherein the part of the total amount of the Al (aluminum) and Si (silicon) is replaced by at least one element selected from Ga (gallium) and Sn (tin).
16. The module according to claim 15 , wherein an amount replaced by at least one element selected from the Ga (gallium) and the Sn (tin) is 10 atomic % or more and 30 atomic % or less of the total amount of the Al (aluminum) and Si (silicon).
17. The module according to claim 16 , wherein the thermoelectric material has a thermal conductivity of 6.9 W/m·K or less.