Polyacene and semiconductor formulation
The invention relates to novel polyacene compounds, organic semiconducting formulations and layers comprising them, a process for preparing the formulation and layer and electronic devices, including organic field effect transistors (OFETs), comprising the same.
1. A polyacene compound selected from the following formulae
wherein R 1a , R 2a , R 3a , R 4a , R 8a and R 9a each independently denote, H, halogen, —CN, —NC, —NCO, —NCS, —OCN, —SCN, —C(═O)NR 0 R 00 , —C(═O)X, —C(═O)R 0 , —NH 2 , —NR 0 R 00 , —SH, —SR 0 , —SO 3 H, —SO 2 R 0 , —OH, —NO 2 —CF 3 , —SF 5 , optionally substituted silyl, or carbyl or hydrocarbyl with 1 to 40 C atoms that is optionally substituted and optionally comprises one or more hetero atoms,
wherein at least two groups R 1a , R 2a , R 3a , R 4a , R 8a or R 9a that are present in the compound are different from H,
X is halogen,
R 0 and R 00 are independently of each other H or an optionally substituted carbyl or hydrocarbyl group optionally comprising one or more hetero atoms,
optionally two or more of the substituents R 1a , R 2a , R 3a , R 4a , R 8a or R 9a , which are located on adjacent ring positions of the polyacene, constitute a further saturated, unsaturated or aromatic ring system having 4 to 40 C atoms, which is monocyclic or polycyclic, is fused to the polyacene, is optionally intervened by one or more groups selected from —O—, —S— and —N(R 0 )—, and is optionally substituted by one or more identical or different groups R 1a , R 2a , R 3a , R 4a , R 8a or R 9a ,
optionally one or more of the carbon atoms in the rings formed by R 1a , R 2a , R 3a , R 4a , R 8a or R 9a are replaced by a heteroatom selected from N, P, As, O, S, Se and Te,
wherein the compound does not have a symmetry axis or symmetry plane perpendicular to its long molecular axis,
R 5a , R 6a , R 11a and R 12a denote —C≡C-MR′R″R′″ or —C≡C-MR′R″″
M is Si or Ge,
R′, R″ and R′″ are each independently H, a C 1 -C 40 -alkyl group, a C 6 -C 40 -aryl group, a C 6 -C 40 -arylalkyl group, a C 1 -C 40 -alkoxy group, or a C 6 -C 40 -arylalkyloxy group,
R″″ forms a cyclic silyl alkyl group together with the M atom,
wherein all these groups are optionally substituted,
and R 13a and R 14a denote a C 1 -C 40 -alkyl group that is optionally substituted.
2. A composition comprising one or more compounds according to claim 1 , one or more organic binders or precursors thereof, and optionally one or more solvents.
3. The composition according to claim 2 , characterized in that the organic binder has a permittivity ∈ at 1,000 Hz of 3.3 or less.
4. The composition according to claim 2 , comprising one or more binders that are styrene, α-methyl styrene, copolymers including one or more of styrene, α-methylstyrene and butadiene, or precursors thereof.
5. The composition according to claim 2 , comprising one or more organic solvents that are dichloromethane, trichloromethane, monochlorobenzene, o-dichlorobenzene, tetrahydrofuran, anisole, morpholine, toluene, o-xylene, m-xylene, p-xylene, 1,4-dioxane, acetone, methylethylketone, 1,2-dichloroethane, 1,1,1-trichloroethane, 1,1,2,2-tetrachloroethane, ethyl acetate, n-butyl acetate, dimethylformamide, dimethylacetamide, dimethylsulfoxide, tetralin, decalin, indane and/or mixtures thereof.
6. An organic semiconducting layer comprising, at least one composition according to claim 2 .
7. A process for preparing an organic semiconducting layer comprising
(i) depositing on a substrate a liquid layer of a composition according to claim 6 ,
(ii) forming from the liquid layer a solid layer which is the organic semiconducting layer,
(iii) optionally removing the layer from the substrate.
8. A process of preparing an unsymmetrical polyacene of claim 1 , comprising reacting an anthracene-1,4-diol with an optionally substituted phthalaldehyde or an optionally substituted heteroaromatic dicarboxaldehyde in the presence of a base.
9. An electronic, optical or electrooptical component or device comprising one or more compounds, according to claim 1 .
10. An organic field effect transistor (OFET), thin film transistor (TFT), component of integrated circuitry (IC), radio frequency identification (RFID) tag, organic light emitting diode (OLED), electroluminescent display, flat panel display, backlight, photodetector, sensor, logic circuit, memory element, capacitor, photovoltaic (PV) cell, charge injection layer, Schottky diode, planarising layer, antistatic film, conducting substrate or pattern, photoconductor, electrophotographic element comprising one or more compounds, according to claim 1 .
11. An OFET device comprising an organic semiconductor layer according to claim 6 and further comprising a gate insulator layer, wherein the gate insulator layer comprises a fluoropolymer and/or the gate insulator layer is deposited from a formulation comprising an insulator material and one or more fluorosolvents.
12. The OFET device according to claim 11 , wherein the organic semiconductor layer comprises a formulation comprising a semiconductor compound and an organic binder.
13. An OFET device comprising an organic semiconductor layer and further comprising a gate insulator layer, wherein the organic semiconductor layer is as defined in claim 6 .
14. An electronic device or OFET device according to claim 10 , which is a top gate OFET device.
15. An electronic device or OFET device according to claim 10 , which is a bottom gate OFET device.
16. A compound of claim 1 , wherein R 1a , R 2a , R 3a , R 4a , R 8a or R 9a are H, halogen, a C 1 -C 40 alkyl group, a C 2 -C 40 alkenyl group, a C 2 -C 40 alkynyl group, a C 3 -C 40 alkyl group, a C 4 -C 40 alkyldienyl group, a C 4 -C 40 polyenyl group, a C 6 -C 18 aryl group, a C 8 -C 40 alkylaryl group, a C 8 -C 40 arylalkyl group, a C 4 -C 40 cycloalkyl group, or a C 4 -C 40 cycloalkenyl group.
17. A compound of claim 1 , wherein R 1a , R 2a , R 3a , R 4a , R 8a or R 9a are H, F, Cl Br, I, —CN, —NO 2 , —NCO, —NCS, —OCN, —SCN, —C(═(O)NR 0 R 00 , -c(=(O)X, —C(═O)R 0 , —NR 0 R 00 , —OH, or —SF 5 , wherein R 0 , R 00 and X are as defined in claim 10 , optionally substituted silyl, aryl with 1 to 12 C atoms, and straight chain or branched alkyl, alkoxy, alkylcarbonyl, alkoxycarbonyl, alkylcarbonyloxy or alkoxycarbonyloxy with 1 to 12 atoms, wherein one or more H atoms are optionally replaced by F or Cl.