Plasma processing apparatus
A plasma processing apparatus includes a chamber for carrying out plasma processing inside, a top plate made of a dielectric material for sealing the upper side of this chamber, and an antenna section that serves as a high frequency supply for supplying high frequency waves into the chamber via this top plate. The top plate is provided with reflecting members inside thereof. The sidewalls of the reflecting members work as wave reflector for reflecting high frequency waves that propagate inside the top plate in the radius direction. Alternatively, no reflecting members may be provided in a manner in which the sidewalls of a recess of the top plate serve as a wave reflector means.
1. A plasma processing apparatus, comprising:
a chamber for carrying out plasma processing inside;
a dielectric plate for sealing an upper side of the chamber;
a high frequency supplying unit for supplying high frequency waves into the chamber via the dielectric plate; and
an antenna plate having a plurality of slots to supply the high frequency waves via the dielectric plate;
wherein:
the dielectric plate has a thick portion and a thin portion and the slots are placed in positions that correspond to the thin portion;
the thin portion has a thickness of no greater than ½ of a wavelength of the high frequency waves when propagating through the dielectric plate; and
the dielectric plate comprises a recess that opens at a surface of the dielectric plate facing the chamber, the recess being provided at a location corresponding to the thin portion.
2. The plasma processing apparatus according to claim 1 , wherein the thin portion is located on a side of the dielectric plate that faces the high frequency supplying unit.
3. The plasma processing apparatus according to claim 1 , wherein the thin portion has a thickness of no greater than ¼ of the wavelength of the high frequency waves when propagating through the dielectric plate.
4. The plasma processing apparatus according to claim 1 , wherein the dielectric plate is segmented.
5. The plasma processing apparatus according to claim 1 , wherein the dielectric plate has mutually adjacent thin portions that sandwich a portion of the dielectric plate having a length of at least ½ of the wavelength of the high frequency wave when propagating through the dielectric plate.
6. A plasma processing apparatus comprising:
a chamber for carrying out plasma processing inside;
a dielectric plate for sealing the upper side of said chamber;
a high frequency supplying unit for supplying high frequency waves into the chamber via the dielectric plate; and
an antenna unit having a slot between the dielectric plate and the high frequency supplying unit;
wherein:
the dielectric plate has a thick portion and a thin portion and the slot is placed in a position that corresponds to the thick portion;
the thin portion has a thickness of no greater than ½ of a wavelength of the high frequency waves when propagating through the dielectric plate; and
the dielectric plate comprises a recess that opens at a surface of the dielectric plate facing the chamber, the recess being provided at a location corresponding to the thin portion.
7. The plasma processing apparatus according to claim 6 , wherein the thin portion is located on a side of the dielectric plate that faces the high frequency supplying unit.
8. The plasma processing apparatus according to claim 6 , wherein the thin portion has a thickness of no greater than ¼ of the wavelength of the high frequency waves when propagating through the dielectric plate.
9. The plasma processing apparatus according to claim 6 , wherein the dielectric plate is segmented.
10. The plasma processing apparatus according to claim 6 , wherein wherein the dielectric plate has mutually adjacent thin portions that sandwich a portion of the dielectric plate having a length of at least ½ of the wavelength of the high frequency wave when propagating through the dielectric plate.