Pixel circuit, display device, and method of manufacturing pixel circuit
A pixel circuit including: a driving transistor; a light emitting element; and a power supply line; wherein the driving transistor is connected between the power supply line and a predetermined electrode of the light emitting element, and the power supply line is formed as multilayer wiring, and an interpolating capacitance is formed such that the power supply line formed as the multilayer wiring and another conductive layer are opposed to each other at a distance.
1. A display device comprising:
a pixel array unit in which a plurality of pixel circuits are formed, said pixel circuits each including a light emitting element, a power supply line, a driving transistor connected between said power supply line and a predetermined electrode of the light emitting element, and a switching transistor connected between a signal line and a gate electrode of said driving transistor;
a first scanner for supplying a potential to said power supply line; and
a second scanner for outputting a driving signal to said switching transistor;
wherein said power supply line is formed as multilayer wiring,
said driving transistor includes a gate electrode formed by a first wiring layer, a channel forming region, a gate insulating film formed between said gate electrode and said channel forming region, and a first electrode and a second electrode formed such that said channel forming region is interposed between the first electrode and the second electrode, and
said power supply line includes a second wiring layer formed so as to be connected to the first electrode of said driving transistor via a contact formed in an insulating film, and a third wiring layer formed so as to be connected to said second wiring layer via a contact formed in an interlayer film.
2. The display device according to claim 1 ,
wherein potential of said power supply line assumes a plurality of values.
3. The display device according to claim 1 ,
wherein said interlayer film is formed by a photosensitive resin.
4. The display device according to claim 1 ,
wherein said interlayer film is formed by a polyimide.
5. The display device according to claim 1 , further comprising a planarizing film formed on said third wiring layer,
wherein letting tp be film thickness of said planarizing film, tl be film thickness of said third wiring layer, and A be a constant of a material for said interlayer film, a following relation is satisfied:
tl=tp /(1 +A ) (Equation 1).
6. The display device according to claim 1 ,
wherein said second electrode is connected to the predetermined electrode of said light emitting element, and said third wiring layer is formed of a same material as said predetermined electrode.
7. A pixel circuit comprising:
a driving transistor;
a light emitting element; and
a power supply line;
wherein said driving transistor is connected between said power supply line and a predetermined electrode of said light emitting element,
said power supply line is formed as multilayer wiring, and an interpolating capacitance is formed such that the power supply line formed as said multilayer wiring and another conductive layer are opposed to each other at a distance,
said driving transistor includes a gate electrode formed by a first wiring layer, a channel forming region, a gate insulating film formed between said gate electrode and said channel forming region, and a first electrode and a second electrode formed such that said channel forming region is interposed between the first electrode and the second electrode, and
said power supply line includes a second wiring layer formed so as to be connected to the first electrode of said driving transistor via a contact formed in an insulating film, and a third wiring layer formed so as to be connected to said second wiring layer via a contact formed in an interlayer film.
8. The pixel circuit according to claim 7 ,
wherein potential of said power supply line assumes a plurality of values.
9. The pixel circuit according to claim 7 ,
wherein said interlayer film is formed by a photosensitive resin.
10. The pixel circuit according to claim 7 ,
wherein said interlayer film is formed by a polyimide.
11. The pixel circuit according to claim 7 , further comprising a planarizing film formed on said third wiring layer,
wherein letting tp be film thickness of said planarizing film, tl be film thickness of said third wiring layer, and A be a constant of a material for said interlayer film, a following relation is satisfied:
tl=tp /(1 +A ) (Equation 1).
12. The pixel circuit according to claim 7 ,
wherein said second electrode is connected to the predetermined electrode of said light emitting element, and said third wiring layer is formed of a same material as said predetermined electrode.